Cell structure and manufacturing method thereof

Abstract

The invention provides a cell structure. A plurality of cells are arranged to form a cell array structure so as to form a power semiconductor device with three ports, any one or more of the three ports are respectively connected with a resistor, each cell comprises an epitaxial layer; a second type light doped region is formed in the epitaxial layer; a first type heavy doped region and a second type heavy doped region are respectively formed in the second light doped region; heavy doped region short circuit holes are formed in the first heavy doped region and the second heavy doped region; gate medium dielectric layers are formed on the surfaces of the epitaxial layer, the second light doped region closely adjacent to the epitaxial layer and a part of the first heavy doped region closely adjacent to the second light doped region; first polycrystalline silicon strips are formed on the gate medium dielectric layers; and regions surrounded by the first heavy doped regions and the heavy doped region short circuit holes of the all cells in the second light doped region are resistors which are connected with a second port, wherein the serial resistors can improve the ESD (electronic static discharge) capability and the cell structure is slightly adjusted so as to be capable of meeting requirements of ESD with various grades.

Description

technical field [0001] The invention belongs to the technical field of electrostatic discharge of power semiconductor devices, and in particular relates to a cellular structure and a manufacturing method thereof. Background technique [0002] Electrostatic Discharge (ESD) is an important factor that causes damage to most electronic components. In order to avoid damage to electronic components, electronic engineers have thought of many countermeasures. One of the mainstream ideas is to design ESD for a single device or integrated circuit , that is, by adding ESD protection components to protect the devices or integrated circuits that need to be protected. Widely used ESD protection components include diodes (Diode), bipolar transistors (NPN / PNP), metal-oxide-semiconductor field-effect transistors (MOSFETs), silicon-controlled rectifiers (SCRs), and the like. [0003] Edward John Coyne et al. propose an electrostatic protection component (referring to document 1: Edward JohnC...

AI Technical Summary

Problems solved by technology

However, the formation of these ESD protection components is relatively complicated, and additional masks are required, which increases the cost while improving the ESD capability

[0004] Therefore, it is necessary to propose a new power semiconductor device to solve the problem that the ESD protection component in the prior art needs to add an additional mask to improve the anti-ESD capability, and the relatively complicated problem is formed.

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