Semiconductor device

Abstract

The invention provides a semiconductor device comprising a substrate having a first region and second regions, the first region being located between two adjacent second regions; three sub drain regions located in the first region of the substrate; two dummy structures respectively positioned on the substrate between the two adjacent sub drain regions; a source region located in the second regions of the substrate; a gate structure positioned on the substrate between the first region and the second regions. The ESD capacity of the device is improved through the dummy structure, an SAB photomask in the prior art is not needed, a new technological process does not need to be introduced, and the dummy structure can be directly and synchronously formed in the manufacturing process, so that the manufacturing cost of the device is reduced.

Description

technical field

[0001] The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor device. Background technique

[0002] As semiconductor device technology continues to move into sub-micron and deep sub-micron, ESD protection device reliability becomes more and more important. Due to electrostatic discharge (Electro-Static-Discharge, ESD), the discharge current flows in the device and generates local heating or electric field concentration, which is prone to electrostatic damage in the device, resulting in failure of the IC device; a short circuit to the ground at one terminal of the device , then a current pulse is generated at the moment of discharge, and the Joule heat generated by the large current causes local metallization of the device to melt or hot spots on the chip to induce secondary breakdown, etc.; when the device is not in contact with the ground, there is no direct discharge path to the ground, and It is to tr...

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