Power semiconductor device with antistatic discharge capacity and manufacturing method

Abstract

The invention provides a manufacturing method for a power semiconductor device with antistatic discharge capacity. The manufacturing method comprises the following steps of: providing the power semiconductor device with a first port, a second port and a third port, wherein the power semiconductor device is formed by arranging cell arrays; and respectively connecting any one port or more than one port of the three ports to a resistor to form the power semiconductor device with the antistatic discharge capacity. The invention also provides the power semiconductor device with the antistatic discharge capacity. By the power semiconductor device with the antistatic discharge capacity and the manufacturing method, a series resistor of any one port or more than one port of three ports of the power semiconductor device serves as an electrostatic discharge (ESD) protective component to improve the ESD capacity; the series resistor can meet the requirements on a plurality of grades of ESD by slightly adjusting a protected device layout structure; and the design flexibility is high.

Description

technical field [0001] The invention belongs to the technical field of electrostatic discharge of power semiconductor devices, and in particular relates to a power semiconductor device with anti-static discharge capability and a manufacturing method. Background technique [0002] Electrostatic Discharge (ESD) is an important factor that causes damage to most electronic components. In order to avoid damage to electronic components, electronic engineers have thought of many countermeasures. One of the mainstream ideas is to design ESD for a single device or integrated circuit , that is, by adding ESD protection components to protect the devices or integrated circuits that need to be protected. Widely used ESD protection components include diodes (Diode), bipolar transistors (NPN / PNP), metal-oxide-semiconductor field-effect transistors (MOSFETs), silicon-controlled rectifiers (SCRs), and the like. [0003] Edward John Coyne et al. propose an electrostatic protection component ...

AI Technical Summary

Problems solved by technology

However, the formation of these ESD protection components is relatively complicated, and additional masks are required, which increases the cost while improving the ESD capability

[0004] Therefore, it is necessary to propose a new power semiconductor device to solve the problem that the ESD protection component in the prior art needs to add an additional mask to improve the anti-ESD capability, and the relatively complicated problem is formed.

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