Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory system including nonvolatile memory device and erasing method thereof

A non-volatile, memory controller technology that is used in the field of memory systems to solve problems such as process errors

Pending Publication Date: 2022-02-22
SAMSUNG ELECTRONICS CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In 3D memory devices, there may be unbroken strings due to process errors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory system including nonvolatile memory device and erasing method thereof
  • Memory system including nonvolatile memory device and erasing method thereof
  • Memory system including nonvolatile memory device and erasing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings. Here, embodiments of the inventive concept are described using a NAND flash memory as an example of a nonvolatile memory device. However, it will be appreciated that the inventive concepts are not limited to NAND flash memory and may be applied to various non-volatile memory devices such as electrically erasable and programmable read-only memory (EEPROM), or non-flash, phase-change random Access memory (PRAM), resistive RAM (RRAM), ferroelectric RAM (FRAM), magnetic RAM (MRAM), spin transfer torque MRAM, conductive bridge RAM (CBRAM), nanotube RAM, polymer RAM (PoRAM), Nano floating gate memory (NFGM), holographic memory, molecular electronic memory, insulator resistance change memory, etc.).

[0025] figure 1 is a block diagram of a memory system 10 including a nonvolatile memory device 100 and a memory controller 200 according to an embodiment o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed are a memory system including a nonvolatile memory device and an erasing method thereof. A fail detecting method of a memory system including a nonvolatile memory device and a memory controller, the fail detecting method including: counting, by the memory controller, the number of erases of a word line connected to a pass transistor; issuing a first erase command, by the memory controller, when the number of erases reaches a reference value; applying a first voltage, by the nonvolatile memory device, in response to the first erase command, that causes a gate-source potential difference of the pass transistor to have a first value; detecting, by the memory controller, a leakage current in a word line, after the applying of the first voltage; and determining, by the memory controller, the word line as a fail when a leakage voltage caused by the leakage current is greater than a first threshold value.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2020-0100101 filed with the Korean Intellectual Property Office on Aug. 10, 2020, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] The inventive concept relates to a memory system, and more particularly, to an erasing method of a memory system including a nonvolatile memory device in which an unbroken string exists and a memory controller. Background technique [0003] As the size of data handled in electronic devices increases, more storage is required. In order to accommodate large data, a three-dimensional memory device with a high degree of integration can be used. In three-dimensional memory devices, unbroken strings may exist due to process errors. Since the data stored in unbroken strings is not highly reliable, techniques for detecting unbroken strings can be developed. Contents of the invention [0004] According to an embodiment of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C29/50H10B41/27H10B43/27
CPCG11C16/3472G11C29/50G11C2029/5004G11C2029/5006G11C29/025G11C29/50004G11C16/0483G11C2211/5644G11C11/5635G11C16/16G11C16/08H01L2224/08145H01L2224/0603H01L24/08H01L2224/06181H01L2924/14511H01L2924/1431H01L24/06H01L25/18H10B43/27G11C16/3445G11C16/14G11C16/30G11C11/5671G11C16/349H01L25/0657H10B41/27
Inventor 孙铭浩郑原宅南釜一
Owner SAMSUNG ELECTRONICS CO LTD