Preparation method of silicon-based heterojunction battery and silicon-based heterojunction battery

A heterojunction battery and silicon-based technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of high cost of heterojunction batteries, and achieve the effect of low cost, fewer steps, and less equipment

Pending Publication Date: 2022-02-25
宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The main purpose of the present invention is to propose a method for preparing a silicon-based heterojunction battery and a silicon-based heterojunction battery, aiming to solve the problem of high cost of heterojunction batteries

Method used

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  • Preparation method of silicon-based heterojunction battery and silicon-based heterojunction battery
  • Preparation method of silicon-based heterojunction battery and silicon-based heterojunction battery
  • Preparation method of silicon-based heterojunction battery and silicon-based heterojunction battery

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Embodiment 1

[0040] This embodiment provides a method for preparing a silicon-based heterojunction cell to replace the low-temperature silver paste printed grid lines in the conventional silicon-based heterojunction cell production process.

[0041] The preparation method of the silicon-based heterojunction battery includes the steps of forming a semiconductor layer, a conductive layer and a gate line on both sides of the silicon substrate, such as Figure 4 As shown, the specific steps of forming the gate lines are as follows:

[0042] Step S100: bonding copper wires covered with conductive glue to the surface of any one of the conductive layers.

[0043] After forming the semiconductor layer and the conductive layer of the silicon-based heterojunction cell, there are two conductive layers which are the light incident surface and the backlight surface respectively. In this step, the copper wire covered with conductive glue is bonded to the light incident surface or The backlight surface,...

Embodiment 2

[0053] This embodiment provides a method for preparing a silicon-based heterojunction cell to replace the low-temperature silver paste printed grid lines in the conventional silicon-based heterojunction cell production process.

[0054] The preparation method of the silicon-based heterojunction battery includes the steps of forming a semiconductor layer, a conductive layer and a gate line on both sides of the silicon substrate, such as Figure 5 As shown, the specific steps of forming the gate lines are as follows:

[0055]Step S100: preheating the light-incident surface of the battery sheet with the conductive layer.

[0056] In this step, to heat the battery sheet, it is necessary to ensure constant temperature and uniform heating. Therefore, in this embodiment, a heating plate with a heating table is used for heating, and a heating light source can be used to irradiate the heating plate, or an In the way of connecting the heating wire, the heating plate is first heated, an...

Embodiment 3

[0071] This embodiment provides a method for preparing a silicon-based heterojunction cell to replace the low-temperature silver paste printed grid lines in the conventional silicon-based heterojunction cell production process, such as Figure 6 As shown, the specific steps are as follows:

[0072] Step S100: preheating the backlight surface of the battery sheet with the conductive layer.

[0073] Step S200: Wetting conductive glue on the surface of the copper wire.

[0074] Step S300: bonding a plurality of copper wires soaked with conductive glue in parallel and equidistant to the backlight surface of the preheated battery sheet.

[0075] Step S400: drying the backlight surface of the battery sheet bonded with the copper wire.

[0076] Step S500: preheating the light-incident surface of the battery sheet with the conductive layer.

[0077] Step S600: bonding a plurality of copper wires impregnated with conductive glue in parallel and equally spaced on the light incident s...

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Abstract

The invention discloses a preparation method of a silicon-based heterojunction battery and a silicon-based heterojunction battery; the silicon-based heterojunction cell comprises a silicon substrate, semiconductor layers, conductive layers and grid lines, the semiconductor layers, the conductive layers and the grid lines are arranged on the two sides of the silicon substrate respectively, the semiconductor layers are arranged on the two sides of the silicon substrate respectively, the conductive layers are arranged on the outer sides of the semiconductor layers, the grid lines are arranged on the outer sides of the conductive layers, and each grid line is composed of a copper wire and a conductive adhesive covering the copper wire. According to the technical scheme, a printed silver electrode is changed into a copper wire electrode, so that the cost of the silicon-based heterojunction cell is reduced.

Description

technical field [0001] The invention belongs to the technical field of solar cell manufacturing, and in particular relates to a method for preparing a silicon-based heterojunction cell and the silicon-based heterojunction cell. Background technique [0002] Heterojunction cells are semiconductor devices that prepare semiconductor layers based on silicon substrates and convert light energy into electrical energy based on the photovoltaic effect. The P-N junction is composed of amorphous silicon (a-Si) and crystalline silicon (c-Si) ) material formed. Heterojunction cells have high conversion efficiency, simple process and fewer steps, and are the most promising next-generation heterojunction cell technology. Conventional heterojunction cells usually use screen printing to print low-temperature silver paste on the surface of the conductive layer to form grid lines for collecting current, and then dry and solidify the silver paste. [0003] The gate lines of existing heteroju...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/074H01L31/05H01L31/18
CPCH01L31/074H01L31/0508H01L31/0512H01L31/1804Y02E10/50Y02P70/50
Inventor 不公告发明人
Owner 宣城睿晖宣晟企业管理中心合伙企业(有限合伙)
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