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MIM capacitor and forming method thereof

A capacitive and graphic technology, applied in capacitors, circuits, electrical components, etc., can solve the problems of MIM capacitor cracks, component ruptures, etc., and achieve the effect of improving chip yield, avoiding cracks, and reducing compressive stress concentration.

Active Publication Date: 2022-03-01
晶芯成(北京)科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] like figure 1 As shown, in order to seek a larger area, the MIM capacitor is usually placed close to the top metal layer or protective layer (such as the dielectric layer 20). Due to the shape of the MIM capacitor itself, that is, the metal with a right-angle turning (that is, a right-angle step A) layer (such as the top metal layer 10), the right-angle turn in the subsequent bonding (Bonding) process, because the compressive stress acting on the surface of the dielectric layer spreads to the MIM capacitor, so that the surroundings of the MIM capacitor need to withstand very large Compressive stress, the compressive stress is concentrated at the turning point A of the MIM capacitor, resulting in internal cracks in the MIM capacitor, which crack along the top insulating layer, metal layer and outermost dielectric layer of the MIM capacitor, causing component rupture

Method used

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  • MIM capacitor and forming method thereof
  • MIM capacitor and forming method thereof
  • MIM capacitor and forming method thereof

Examples

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Embodiment 1

[0084] figure 2 It is a schematic flowchart of a method for forming a MIM capacitor of the present invention. Such as figure 2 As shown, the present embodiment provides a method for forming a MIM capacitor, comprising the following steps:

[0085] Step S10: providing a semiconductor substrate, on which at least one first metal layer stacked and a first insulating layer disposed between adjacent first metal layers are formed;

[0086] Step S20: forming a top insulating layer and a top metal layer, the top insulating layer is partially located on the adjacent first metal layer, the top metal layer is located on the top insulating layer, wherein the top metal The layer includes a first part and a second part in a direction perpendicular to the thickness, the first part is located above the first metal layer, the second part is located outside the first metal layer, and the first part and the second part There are right-angled steps between them;

[0087] Step S30: forming a...

Embodiment 2

[0113] Compared with Embodiment 1, the shape of all the first metal layers in this embodiment is the same as that of the top metal layer; or, at least part of the first metal layer has the same shape as the top metal layer, and it is not necessary for all The first metal layer is passivated. Wherein, the first metal layer having the same shape as the top metal layer includes a third part and a fourth part, and when there is a right-angle step between the third part and the fourth part, the initial metal layer on the first metal layer is removed. The photoresist layer methods include:

[0114] Dry etching the initial photoresist layer to expose the third part, and the surface of the initial photoresist layer on the fourth part is flush with the surface of the third part; and

[0115] The remaining initial photoresist layer is removed by an oxygen ashing process.

[0116] In this embodiment, only the right-angle steps of the top metal layer are passivated to reduce stress conc...

Embodiment 3

[0118] Compared with Embodiment 1, step S40 of this embodiment includes:

[0119] Dry etching the first photoresist layer to expose the first part, and the surface of the first photoresist layer on the second part is flush with the surface of the first part;

[0120] removing the remaining first photoresist layer by an oxygen ashing process; and

[0121] see Figure 3h , etching the top metal layer through a wet etching process, and passivating the right-angle step to form an obtuse-angle step, thereby forming a MIM capacitor.

[0122] Compared with the prior art, the method for forming the second metal layer in this embodiment adds a wet etching process after the dry etching process, and only passivates the right angles of the top metal layer through the wet etching process. Steps to form obtuse angle steps, reducing stress concentration and avoiding cracks.

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Abstract

According to the MIM capacitor and the forming method thereof provided by the invention, the first photoresist layer is etched for several times, and the right-angle step is passivated to form the obtuse-angle step, so that the MIM capacitor is formed. By passivating the right-angle step of the top metal layer, the compressive stress concentration of the MIM capacitor is reduced, and cracks are avoided, so that the chip yield is improved, and the reliability of a semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a MIM capacitor and a forming method thereof. Background technique [0002] Capacitive components are often used as electronic passive devices in integrated circuits such as radio frequency ICs and monolithic microwave ICs. Common capacitive elements include metal oxide semiconductor (MOS) capacitors, PN junction capacitors, and MIM (metal-insulator-metal, metal layer-top insulating layer-metal layer) capacitors. Among them, MIM capacitors provide better electrical characteristics than MOS capacitors and PN junction capacitors in some special applications. This is because MOS capacitors and PN junction capacitors are limited by their own structures, and the electrodes are prone to generate hole layers during operation. , causing its frequency characteristics to degrade. The MIM capacitor can provide better frequency and temperature-related characteristics. [0003] S...

Claims

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Application Information

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IPC IPC(8): H01L23/64
CPCH01L28/40H01L28/60
Inventor 游咏晞吴启明郑志成
Owner 晶芯成(北京)科技有限公司