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Method for producing crystals for synthetic gemstones

A manufacturing method and technology for synthesizing gemstones, which are applied in the directions of crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of high price, difficulty in manufacturing high-purity SiC single crystal ingots, and difficulty in providing price synthetic gemstones, etc. Inexpensive effect

Active Publication Date: 2022-05-27
株式会社宝利雅
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  • Abstract
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Problems solved by technology

Therefore, synthetic jewels produced by cutting the SiC single crystal ingot as described above cannot fully exhibit their original value as synthetic jewels.
[0004] On the other hand, it is difficult to manufacture high-purity SiC single-crystal ingots, and thus the price is very high, so it is difficult to provide synthetic gemstones at reasonable prices

Method used

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  • Method for producing crystals for synthetic gemstones
  • Method for producing crystals for synthetic gemstones
  • Method for producing crystals for synthetic gemstones

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Embodiment Construction

[0023] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited to the following embodiment. Further, appropriate changes can be made within a range not departing from the effects of the present invention.

[0024] figure 1 It is a graph showing the result of measuring the transmission spectrum of the 4H-SiC single crystal. The measurement was performed using a spectrophotometer, and the vertical axis represents transmittance and the horizontal axis represents wavelength. The curves indicated by the arrows A, B, and C in the figure respectively indicate that the density of the n-type impurity (nitrogen) is 1×10 16 cm -3 , 2×10 18 cm -3 , 5×10 18 cm -3 The measurement results of SiC single crystal. It should be noted that the n-type impurity density of the SiC single crystal ingot that can be used commercially for the manufacture of semiconductor devices is usua...

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Abstract

The application relates to a method for manufacturing crystals for synthetic gemstones. A method for producing a crystal body for synthetic gemstones comprising: a step of preparing a SiC single crystal containing an n-type impurity; The irradiating energy and the irradiating dose of the electron beams are set in the manner.

Description

technical field [0001] The present invention relates to a method for producing a crystal body for synthetic gemstones formed from a SiC single crystal containing an n-type impurity. Background technique [0002] SiC (silicon carbide) is used as a material for semiconductor devices, and because SiC has high hardness and high refractive index, it is also highly evaluated as a practical and bright synthetic gemstone. [0003] However, in general, in order to achieve lower resistance, nitrogen as an n-type impurity is doped into a SiC single crystal ingot, which becomes a source of a SiC wafer that can be used commercially for manufacturing semiconductor devices. Therefore, the band gap of SiC single crystal is wide (Eg=3.26eV), so it should be colorless and transparent originally, but the SiC single crystal ingot doped with n-type impurities is colored (amber). Therefore, the synthetic gemstone produced by cutting the SiC single crystal ingot as described above cannot fully ex...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/04C30B29/36
CPCC30B33/04C30B29/36
Inventor 小原亦聪木本恒畅
Owner 株式会社宝利雅
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