Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-dimensional storage device and manufacturing method thereof

A technology of three-dimensional storage and production method, which is applied in the field of three-dimensional storage device and its production

Pending Publication Date: 2022-03-15
YANGTZE MEMORY TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the method of forming a three-dimensional memory device still faces many challenges

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional storage device and manufacturing method thereof
  • Three-dimensional storage device and manufacturing method thereof
  • Three-dimensional storage device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] To make the technical solution and advantages of the embodiments more clearly, it will be explained in further detail below technical solution of the present invention in conjunction with the accompanying drawings and embodiments. Although a method of an exemplary embodiment of the present invention, in the drawings, it should be understood that the present invention may be implemented in various forms and embodiments are not set forth herein limits. Rather, these embodiments are able to more thorough understanding of the present invention, and the scope of the present invention is able to convey the complete skilled in the art.

[0048] By way of example the present invention is more particularly described in the following paragraphs with reference to the accompanying drawings. The following description and the appended claims, features and advantages of the present invention will be apparent. It should be noted that the drawings are used in a very simplified form and are ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a three-dimensional storage device and a manufacturing method thereof. The three-dimensional storage device comprises the following steps: forming a first stack structure on a substrate; the first stacked structure at least comprises a sacrificial semiconductor layer and a barrier layer which are stacked; forming a second stack structure on the first stack structure; the second stacking structure comprises a plurality of first dielectric layers and second dielectric layers which are arranged at intervals; etching the first stack structure and the second stack structure to form a dummy channel hole which at least penetrates through the second stack structure and does not penetrate through the first stack structure; wherein in the etching process, the etching rate of an etching source to the barrier layer is lower than the etching rate of the etching source to the first stack structure; filling an insulating material in the dummy channel hole; the substrate and the first stacking structure are removed; and forming a semiconductor layer.

Description

Technical field [0001] The present invention relates to semiconductor technology, and more particularly to a three-dimensional memory device and a manufacturing method thereof. Background technique [0002] Three-dimensional memory device, such as 3D NAND, type flash memory is a new, three-dimensional memory means to address the limitations of the two-dimensional plane or flash caused by vertically stacking a plurality of data storage unit. Three-dimensional storage device with superior accuracy, support in a smaller space accommodates higher storage capacity, low cost, low power, fully able to meet many needs. However, the method of forming a three-dimensional memory device still faces many challenges. Inventive content [0003] In order to solve the related art problems, an embodiment of a three-dimensional memory device and manufacturing method of the present invention. [0004] Embodiments of the present invention provides in one aspect a method of making a three-dimensional...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L27/1157H01L27/11582H10B69/00H10B43/27H10B43/35
CPCH10B69/00H10B43/35H10B43/27
Inventor 肖为引李明杨罡
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com