Low etching photoresist cleaning agent

Abstract

The invention discloses a low etching photoresist cleaning agent, comprising benzyl alcohol and/or ramification of the benzyl alcohol, quaternary ammonium hydroxide and dimethyl sulfoxide. The cleaning agent of the invention can be used for removing photoresist (light resistance) and other residues on metals, metal alloys or dielectric substrates, has low etching speed on metals such as SiO2, copper, etc. and low-k material, and has excellent application prospect in micro-electron fields such as semiconductor wafer cleaning, etc.

Description

technical field [0001] The invention relates to a cleaning agent in a semiconductor manufacturing process, in particular to a photoresist cleaning solution. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of metals such as silicon dioxide, copper, and low-k materials, and pattern transfer is performed by wet or dry etching after exposure. Low temperature and fast cleaning process is an important direction for the development of semiconductor wafer manufacturing process. In the process of chemically cleaning the photoresist on the semiconductor wafer, the cleaning agent often causes serious corrosion to the wafer substrate, especially the corrosion of the metal substrate, which often leads to a significant decrease in wafer yield. The photoresist cleaning agents disclosed in the prior art more or less have the problem of poor cleaning effect or corrosion of the wafer substrate. [0003] Patent docum...

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Problems solved by technology

[0008] The purpose of the present invention is to solve the problem of poor cleaning effect of existing cleaning agents or strong corrosion on substrates in

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