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STI (shallow trench isolation) structure for improving filling capability of shallow trench and filling method of STI structure

A filling capability, shallow trench technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of voids in STI trenches

Pending Publication Date: 2022-04-01
HUA HONG SEMICON WUXI LTD +1
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Problems solved by technology

[0004] The present application provides an STI structure and its filling method to improve shallow trench filling ability, so as to solve the problem of voids in STI trenches

Method used

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  • STI (shallow trench isolation) structure for improving filling capability of shallow trench and filling method of STI structure
  • STI (shallow trench isolation) structure for improving filling capability of shallow trench and filling method of STI structure
  • STI (shallow trench isolation) structure for improving filling capability of shallow trench and filling method of STI structure

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Embodiment Construction

[0019] Next, the technical solutions in the present application will be described in conjunction with the drawings. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative labor are the scope of the present application.

[0020] In the description of this application, it is to be described in that the term "center", "upper", "lower", "left", "right", "vertical", "horizontal", "within", "outside", etc. The orientation or position of the indication is based on the orientation or positional relationship shown in the drawings, which is intended to facilitate the description of the present application and simplified description, rather than indicating or implying that the device or component must have a specific orientation. Construct and operation, so it is not understood to be the limitations of the present application. Moreover, the term "first", "second", "third" is only used to describe the p...

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Abstract

The invention discloses a method for improving the filling capability of an STI shallow trench, and the method comprises the steps: removing a part of a first filler after the first filler deposition of the STI shallow trench is completed, and enabling a cavity in the first filler to be exposed; and completing the deposition of the second filler of the STI shallow trench. In the method for improving the STI shallow trench filling capability, through two times of STI trench filling, a cavity appearing in a filler after the first time of STI trench filling is exposed through chemical mechanical grinding between the two times of STI trench filling, so that no cavity appears in the STI filler after the second time of STI trench filling is ensured.

Description

Technical field [0001] The present application relates to the field of semiconductor manufacturing, and in particular to a STI structure and filling method thereof in improving shallow trench filler. Background technique [0002] Shallow trench isolation, named SHALLOW TRENCH ISOLATION, referred to as STI. Usually used in 0.25 um or less, the silicon is filled with silicon after deposition, patterning, etching silicon, and filled in the tank by silica mask. [0003] The insulation structure between the production of shallow trench isolation technology has been generally adopted. The formation of the STI structure is usually deposited on the semiconductor substrate, and then the silicon nitride layer is patterned to form a hard mask. The substrate is then etched, and a steep trench is formed between adjacent elements. Finally, the oxide forming element isolation structure is filled in the trench, and the high density plasma chemical vapor deposition (HDP) process has excellent fil...

Claims

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Application Information

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IPC IPC(8): H01L21/762
Inventor 王妍宋欢欢
Owner HUA HONG SEMICON WUXI LTD
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