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A kind of preparation method of double-polished thin substrate nitride epitaxial layer and its epitaxial layer

A nitride epitaxial layer and epitaxial layer technology, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problem of low quality of epitaxial layer, and achieve the effect of reducing leakage channel

Active Publication Date: 2022-05-13
JIANGSU INST OF ADVANCED SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a nitride epitaxial layer of a double-throwing thin substrate and the epitaxial layer thereof, which overcomes the problem in the prior art that the epitaxial layer of the thin substrate is too warped and the quality of the grown epitaxial layer is not high

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  • A kind of preparation method of double-polished thin substrate nitride epitaxial layer and its epitaxial layer
  • A kind of preparation method of double-polished thin substrate nitride epitaxial layer and its epitaxial layer
  • A kind of preparation method of double-polished thin substrate nitride epitaxial layer and its epitaxial layer

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Embodiment 1

[0044] Please refer tofigure 1 , figure 1 It is a flow chart of Embodiment 1 of the method for preparing a nitride epitaxial layer on a double-thin substrate provided by the present invention; the specific operation steps are as follows:

[0045] Step S101: providing a double-polished thin substrate, the double-polished thin substrate has a thickness of 100 μm, and performing a first annealing treatment on the first side (ie, the back side) of the double-polished thin substrate;

[0046] The surface roughness of the first side (i.e. the back side) of the double-polished thin substrate is greater than 0.5 μm, and the roughness of the second side (i.e. the front side) is less than 0.5 nm.

[0047] The first annealing treatment steps are as follows:

[0048] The temperature of the reaction chamber is controlled to the first heat treatment temperature of 1080~1200°C, and H 2 , for 10s, to clean the surface of the double-thin substrate;

[0049] The temperature of the reaction c...

Embodiment 2

[0067] Based on the above embodiments, this embodiment provides a more detailed description of a method for preparing a nitride epitaxial layer on a double-thin substrate. Please refer to figure 2 and image 3 , figure 2 The flow chart of Embodiment 2 of the method for preparing a nitride epitaxial layer on a double-thin substrate provided by the present invention, image 3 The epitaxial layer surface figure under the microscope of the double-throw thin substrate nitride epitaxial layer prepared for the present invention; Concrete operation steps are as follows:

[0068] Step S201: providing a double-thin substrate with a thickness of 200 μm;

[0069] In the present invention, the thickness of the double-thin substrate is 100-300 μm; in this field, the use of a thin substrate (less than 400 μm) can improve the substrate grinding efficiency, but the thin substrate will suffer from excessive warpage during the epitaxial growth process. It is difficult to overcome the uneven...

Embodiment 3

[0104] In this embodiment, the GaN back epitaxial layer in the anti-warping structure is non-doped GaN, and the Al composition in the AlGaN back epitaxial layer is 0.2. For a more detailed description, please refer to Figure 4 , Figure 4 It is a flow chart of Embodiment 3 of the method for preparing a nitride epitaxial layer on a double-thin substrate provided by the present invention, and the specific operation steps are as follows:

[0105] Step S401: providing a double-polished thin substrate with a thickness of 300 μm;

[0106] The roughness of the first side (ie, the back side) of the double-polished thin substrate is greater than 0.5 μm, and the roughness of the second side (ie, the front side) is greater than 0.5 nm.

[0107] Step S402: performing the first annealing treatment on the first side (ie, the back side) of the double-polished thin substrate;

[0108] In this embodiment, the surface roughness of the back side (ie, the first side) of the double-thin substra...

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Abstract

The invention discloses a method for preparing a nitride epitaxial layer of a double-thin substrate, comprising: providing a double-thin substrate, and performing a first annealing treatment on the first surface of the double-thin substrate; An anti-warping structure is fabricated on one side, and the anti-warping structure includes a low-temperature AlInN nitride back buffer layer, an AlInN back epitaxial layer, a GaN back epitaxial layer, and an AlGaN back epitaxial layer formed sequentially on the first side; The second annealing treatment is performed on the second surface of the double-thin substrate; the low-temperature nitride buffer layer and the nitride layer are sequentially placed on the second surface; the low-temperature AlInN nitride back buffer layer is etched by wet method, so that the The double-thin substrate is separated from the anti-warping structure to obtain a nitride epitaxial layer of the double-thin substrate. The invention utilizes the anti-warping structure grown on the back of the double-thrown thin substrate to generate stress opposite to that of the epitaxial layer grown on the front to improve the quality of the epitaxial layer, avoiding the growth of the front to form a buffer layer, and to generate a high-quality nitride epitaxial layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor epitaxy, in particular to a method for preparing a double-thin substrate nitride epitaxial layer and the epitaxial layer. Background technique [0002] At present, MOCVD epitaxy of GaN-based semiconductor materials is an epitaxial technology grown on heterogeneous substrates. Due to the mismatch between the lattice and thermal expansion between the substrate and the epitaxial layer, the dislocation density and stress of the epitaxially grown crystal material are high, which is easy Warping cracks and other phenomena appear. These dislocations behave as non-radiative recombination centers when the device is working, which affects the efficiency of the device. Applications in the field of electronics; in addition, with the development of markets such as semiconductor lighting and display, the demand for substrates is increasingly shifting to larger sizes, warpage caused by residual stress in G...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/12C23C16/01C23C16/30
Inventor 闫其昂王国斌
Owner JIANGSU INST OF ADVANCED SEMICON CO LTD