10results about How to "Reduce lobes" patented technology

The invention discloses a non-contact adsorption porous ceramic suction cup and a manufacturing method thereof, a special gas circuit structure is arranged in a base, blowing airflow and adsorption airflow between the suction cup and an adsorbed workpiece are balanced, and non-contact adsorption clamping is realized by utilizing the comprehensive effect of gas suspension and vacuum adsorption prepressing; according to the invention, gas flows out on the whole porous ceramic surface, that is, a layer of gas film exists between the porous ceramic plate and an adsorbed workpiece, so that the adsorbed workpiece is uniformly subjected to the action of suspension force, and the problem of cracking of the workpiece caused by non-uniform stress in the non-contact adsorption process is further reduced; the vacuum adsorption holes distributed in the base are used for adsorption, the adsorption force is strong and stable, and the adsorption force equivalent to that of a common contact type porous ceramic suction cup can be obtained; due to the fact that the borne load is even, stable gaps can be formed between the porous ceramic plates, a precise plane is further formed, and high precision retentivity is achieved.

The invention discloses a silicon-based AlGaN / GaN HEMT epitaxial structure and a preparation method. The epitaxial structure comprises a silicon substrate, an AlN buffer layer, a stepped AlGaN stress release layer, a GaN seed padding roughening layer, a GaN epitaxial layer, a first AlN insertion layer, a first C-doped GaN layer, a second AlN insertion layer, a second C-doped GaN layer, a third AlN insertion layer, an undoped GaN channel layer, a fourth AlN insertion layer, an AlGaN barrier layer, and a GaN capacitor layer, which are sequentially stacked from bottom to top; the stepped AlGaN stress release layer comprises a plurality of AlGaN layers with a molar content of Al component of 70%-20%, the molar content of Al component of each AlGaN layer decreases layer by layer from bottom to top, and the thickness of each AlGaN layer increases layer by layer from bottom to top.

The invention belongs to the technical field of battery welding, and discloses a heterojunction battery interconnection welding method and a battery assembly. Coating a conductive adhesive on the welding bracket; welding a plurality of cleaned battery pieces, laying the battery pieces on a welding bracket, and heating, curing and welding to form a battery string; and the adjacent battery strings are connected with the welding bracket through the welding strips to form the heterojunction battery. According to the interconnection welding method for the heterojunction battery, through a series of elaborate design and process control, the problem that the battery piece is possibly cracked due to stress generated by external force impact, subfissure or temperature difference shrinkage in the welding process is effectively solved, so that the electrical property and the photoelectric conversion efficiency of the battery piece are remarkably improved; and the quality and the reliability of the battery assembly are ensured.

The invention relates to the technical field of semiconductor crystal ingot processing, in particular to a method and a device for identifying and processing a specific area of a crystal ingot. The invention provides a method for identifying and processing a specific area of a crystal ingot, which comprises the following steps of: adopting a light source to irradiate, adopting a camera to collect a color pattern image, automatically identifying the specific area without cracks in the crystal ingot in combination with an area identification algorithm, and carrying out secondary processing on the area until the specific area disappears or reaches a processing standard. According to the method, the automation and precision of processing can be improved, manual intervention is reduced, the uniformity and integrity of crystal ingot cracks are ensured, and the stripping quality and production efficiency of wafers are improved. Meanwhile, the method effectively solves the technical problem of identifying and processing a specific area in the prior art, and has a relatively high industrial application value.

The present invention provides a wafer carrier, comprising: a box for carrying wafers, a base for gripping and cooperating, a mounting seat for cooperating with a detection machine, and a cover body cooperating with the box; wherein the base and the mounting seat are separately arranged on the outside of the box and arranged in alignment; and the base and the mounting seat are both placed in parallel with the wafer. The carrier of the present invention is particularly suitable for placing large-size wafers, has high structural strength and stable wafer placement, can cover wafers, and reduce the fragmentation rate; can cooperate with manual operation or robot clamping operation, and can also place wafers horizontally or vertically, has a wide range of uses, is highly practical, ensures wafer quality, and improves production efficiency.

The invention provides a chemical strengthening method of glass, chemically strengthened glass and application of the chemically strengthened glass, and belongs to the technical field of glass strengthening. According to the chemical strengthening method of the glass, a certain amount of alkali metal ions contained in the glass are added into first fused salt, and the condition of first ion exchange treatment is adjusted, so that the ion exchange capacity is reduced under the condition of guaranteeing the depth of an ion exchange layer; by controlling the content of KNO3 in the second molten salt and the conditions of the second ion exchange treatment, the second molten salt contains more alkali metal ions needing to be exchanged, so that the pressure stress of the glass surface meets the requirement in a short time, the overall ion exchange capacity is reduced, and the service life of the glass is prolonged. The chemically strengthened glass prepared by the invention has low expansion size and high pressure stress, and meets the requirements of the chemically strengthened glass on the expansion size and the pressure stress.

The invention discloses a clopidogrel-containing solid preparation and a preparation method thereof, the clopidogrel-containing solid preparation is prepared by tabletting clopidogrel particles, the clopidogrel-containing solid preparation comprises clopidogrel hydrogen sulfate, a filler, a disintegrating agent, an antioxidant, a lubricant and polyethylene glycol 6000, the particle size of the polyethylene glycol 6000 is 40-80 meshes, the antioxidant is dissolved in a wetting agent and is added in an atomized manner, and the filler, the disintegrating agent, the antioxidant, the lubricant and the polyethylene glycol 6000 are mixed uniformly. The clopidogrel hydrogen sulfate particles which are not sticky and do not generate yellow spots are prepared through wet granulation, and the clopidogrel hydrogen sulfate particles are good in stability and easy to produce on a large scale.

The utility model discloses a chamfering device for a pulse capacitor. Comprising a first chamfered tank, a plurality of second chamfered tanks sequentially stacked on the first chamfered tank, a fixing mechanism used for fixing the first chamfered tank and the second chamfered tanks, and positioning mechanisms arranged between the first chamfered tank and the second chamfered tanks or between every two adjacent second chamfered tanks. The sealing plate is arranged at the top of the second chamfered tank located at the upper end; the sealing mechanisms are arranged between the sealing plate and the second chamfered tanks, between every two adjacent second chamfered tanks and between the first chamfered tanks and the second chamfered tanks; according to the chamfering device, the structure of the chamfering device is limited, the first chamfering tank and the multiple second chamfering tanks are arranged in sequence so that the single pulse capacitors can be placed, the chamfering efficiency is ensured, and meanwhile the phenomenon that the chamfered pulse capacitors are cracked can be effectively reduced.

The utility model discloses an edge sealing mechanism of photovoltaic module belongs to photovoltaic module manufacturing technical field. In this edge sealing mechanism, surface edge sealing wheel group includes the first gap for accommodating the edge of photovoltaic module bonded with edge sealing tape, tape edge wheel group includes the second gap for accommodating the edge of photovoltaic module bonded with edge sealing tape or edge sealing tape, the first pressure sensor in first pressure sensor group is arranged above and below surface edge sealing wheel group respectively, the second pressure sensor in second pressure sensor group is arranged above and below tape edge wheel group respectively. Based on the setting of first pressure sensor and second pressure sensor, the edge sealing pressure of upper and lower surfaces and the edge sealing pressure of edge sealing tape are detected in real time respectively, reduce the situation of the occurrence of the crack piece or bubble, improve the edge sealing yield of photovoltaic module, solve the problem that the poor accuracy of the detection edge sealing pressure in prior art leads to the increase of the defective rate of the component before laminating.

The application relates to the technical field of special glass, and provides a glass substrate, chemically strengthened glass and a strengthening method and cover plate glass. The glass substrate provided by the application comprises the following components in terms of the total mole content of oxides in the glass substrate: SiO2: 58-68%; Al2O3: 7.5-9.2%; Na2O: 11.3-14.5%; K2O: 2.5-5%; MgO: 7.5-10.2%; B2O3: 0-2%; ZnO: 0.1-2%; and WO3: 0.1-4%. The size change rate of the glass substrate provided by the application is less than or equal to 0.015% before and after chemical strengthening. During the chemical strengthening process, the glass substrate needs to be inserted into a holder, and then the glass substrate and the holder are placed in a strengthening salt bath for strengthening. Since the size change rate of the glass substrate provided by the application is small, the holder does not need to reserve a large size change gap, and the risk of glass film falling can be obviously reduced.