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Preparation method for inhibiting light attenuation of solar cells

A solar cell and light attenuation technology, applied in the field of solar cells, can solve the problems of solar cell photoelectric conversion efficiency decline, light-induced attenuation, uneven concentration of doping elements, etc., to improve photoelectric conversion efficiency, reduce recombination strength, and wide application foreground effect

Inactive Publication Date: 2017-02-22
GUILIN RONGTONG TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For p-type boron-doped crystalline silicon solar cells, the boron-oxygen complex generated during the use of the cell under light will lead to light-induced attenuation, which will seriously reduce the photoelectric conversion efficiency of the solar cell.
At present, to solve this problem, doping gallium, germanium and other precious metal elements is usually used, and it is very easy to cause the concentration of doping elements in the silicon crystal to be uneven.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A preparation method for suppressing light attenuation of solar cells, comprising the following steps:

[0019] (1) Mix the polysilicon raw material with boron and mix evenly, put it into a single crystal furnace and heat up to 1420°C, grow under dark light treatment after melting to obtain boron-doped Czochralski single crystal silicon, slice and clean to obtain silicon wafer A ;

[0020] (2) Put the silicon wafer A obtained in step (1) into a reducing atmosphere for annealing treatment, wherein the annealing temperature is 720°C, the holding time is 4 hours, and the reducing atmosphere is composed of carbon monoxide, nitrogen and methane by volume The ratio is 2:1:2 composition;

[0021] (3) The silicon wafer A obtained after annealing in the step (2) is carried out the preparation of solar cell, comprises: silicon wafer A is cleaned and textured, and phosphorus diffusion, etching and deposition of anti-reflection film are carried out after texture , and finally pre...

Embodiment 2

[0023] A preparation method for suppressing light attenuation of solar cells, comprising the following steps:

[0024] (1) Mix the polysilicon raw material with boron and mix evenly, put it into a single crystal furnace and heat up to 1380°C, grow under dark light treatment after melting to obtain boron-doped Czochralski single crystal silicon, slice and clean to obtain silicon wafer A ;

[0025] (2) Put the silicon wafer A obtained in step (1) into a reducing atmosphere for annealing treatment, wherein the annealing temperature is 600° C., the holding time is 8 hours, and the reducing atmosphere is composed of carbon monoxide, nitrogen and methane by volume The ratio is 2:1:2 composition;

[0026] (3) The silicon wafer A obtained after annealing in the step (2) is carried out the preparation of solar cell, comprises: silicon wafer A is cleaned and textured, and phosphorus diffusion, etching and deposition of anti-reflection film are carried out after texture , and finally p...

Embodiment 3

[0028] A preparation method for suppressing light attenuation of solar cells, comprising the following steps:

[0029] (1) Mix the polysilicon raw material with boron and mix it evenly, put it into a single crystal furnace and heat it up to 1460°C, grow it under dark light treatment after melting to obtain boron-doped Czochralski single crystal silicon, slice and wash to obtain silicon wafer A ;

[0030] (2) Put the silicon wafer A obtained in step (1) into a reducing atmosphere for annealing treatment, wherein the annealing temperature is 800° C., the holding time is 1 hour, and the reducing atmosphere is composed of carbon monoxide, nitrogen and methane by volume The ratio is 2:1:2 composition;

[0031] (3) The silicon wafer A obtained after annealing in the step (2) is carried out the preparation of solar cell, comprises: silicon wafer A is cleaned and textured, and phosphorus diffusion, etching and deposition of anti-reflection film are carried out after texture , and fi...

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PUM

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Abstract

The invention discloses a preparation method for inhibiting light attenuation of solar cells. The preparation method includes doping boron into polycrystalline silicon materials, then melting the polycrystalline silicon materials and growing and slicing the polycrystalline silicon materials under dark-light treatment conditions to obtain silicon wafers; cleaning the silicon wafers, then placing the silicon wafers in reducing atmosphere and carrying out annealing treatment on the silicon wafers; taking the silicon wafers out of the reducing atmosphere, then cleaning the silicon wafers and making texture surfaces; carrying out phosphorus diffusion and etching after the texture surfaces are made and depositing antireflective films; preparing electrodes and sintering the electrodes to obtain the solar cells. The preparation method for inhibiting light attenuation of the solar cells has the advantages that the preparation method is easy to implement, light attenuation characteristics of boron-doped crystalline silicon can be effectively inhibited, accordingly, the photoelectric conversion efficiency can be greatly enhanced, and the preparation method has a broad application prospect.

Description

technical field [0001] The invention relates to a preparation method for suppressing light attenuation of solar cells, belonging to the technical field of solar cells. Background technique [0002] As an "inexhaustible and inexhaustible" renewable clean energy, solar energy has attracted extensive research in international academic circles and great attention from all over the world in recent years. Among all photovoltaic products, solar cells based on p-type boron-doped crystalline silicon are the most important commercial products, and their market share has reached more than 80%. In order to reduce the cost of photovoltaic power generation, reducing production cost and improving cell conversion efficiency are the most mainstream ways of crystalline silicon solar cells. [0003] For p-type boron-doped crystalline silicon solar cells, the boron-oxygen complex generated during the use of the cell under light will lead to light-induced attenuation, which in turn will serious...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C30B15/00C30B33/02
CPCC30B15/00C30B33/02H01L31/1804H01L31/1864Y02E10/547Y02P70/50
Inventor 佘延英
Owner GUILIN RONGTONG TECH CO LTD