Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of double-polished thin substrate nitride epitaxial layer and epitaxial layer thereof

A technology of nitride epitaxial layer and epitaxial layer, which is applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problem of low quality of epitaxial layer, and achieve the effect of reducing leakage channels

Active Publication Date: 2022-04-01
JIANGSU INST OF ADVANCED SEMICON CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a nitride epitaxial layer of a double-throwing thin substrate and the epitaxial layer thereof, which overcomes the problem in the prior art that the epitaxial layer of the thin substrate is too warped and the quality of the grown epitaxial layer is not high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of double-polished thin substrate nitride epitaxial layer and epitaxial layer thereof
  • Preparation method of double-polished thin substrate nitride epitaxial layer and epitaxial layer thereof
  • Preparation method of double-polished thin substrate nitride epitaxial layer and epitaxial layer thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Please refer tofigure 1 , figure 1 It is a flow chart of Embodiment 1 of the method for preparing a nitride epitaxial layer on a double-thin substrate provided by the present invention; the specific operation steps are as follows:

[0045] Step S101: providing a double-polished thin substrate, the double-polished thin substrate has a thickness of 100 μm, and performing a first annealing treatment on the first side (ie, the back side) of the double-polished thin substrate;

[0046] The surface roughness of the first side (i.e. the back side) of the double-polished thin substrate is greater than 0.5 μm, and the roughness of the second side (i.e. the front side) is less than 0.5 nm.

[0047] The first annealing treatment steps are as follows:

[0048] The temperature of the reaction chamber is controlled to the first heat treatment temperature of 1080~1200°C, and H 2 , for 10s, to clean the surface of the double-thin substrate;

[0049] The temperature of the reaction c...

Embodiment 2

[0067] Based on the above embodiments, this embodiment provides a more detailed description of a method for preparing a nitride epitaxial layer on a double-thin substrate. Please refer to figure 2 and image 3 , figure 2 The flow chart of Embodiment 2 of the method for preparing a nitride epitaxial layer on a double-thin substrate provided by the present invention, image 3 The epitaxial layer surface figure under the microscope of the double-throw thin substrate nitride epitaxial layer prepared for the present invention; Concrete operation steps are as follows:

[0068] Step S201: providing a double-thin substrate with a thickness of 200 μm;

[0069] In the present invention, the thickness of the double-thin substrate is 100-300 μm; in this field, the use of a thin substrate (less than 400 μm) can improve the substrate grinding efficiency, but the thin substrate will suffer from excessive warpage during the epitaxial growth process. It is difficult to overcome the uneven...

Embodiment 3

[0104] In this embodiment, the GaN back epitaxial layer in the anti-warping structure is non-doped GaN, and the Al composition in the AlGaN back epitaxial layer is 0.2. For a more detailed description, please refer to Figure 4 , Figure 4 It is a flow chart of Embodiment 3 of the method for preparing a nitride epitaxial layer on a double-thin substrate provided by the present invention, and the specific operation steps are as follows:

[0105] Step S401: providing a double-polished thin substrate with a thickness of 300 μm;

[0106] The roughness of the first side (ie, the back side) of the double-polished thin substrate is greater than 0.5 μm, and the roughness of the second side (ie, the front side) is greater than 0.5 nm.

[0107] Step S402: performing the first annealing treatment on the first side (ie, the back side) of the double-polished thin substrate;

[0108] In this embodiment, the surface roughness of the back side (ie, the first side) of the double-thin substra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
surface roughnessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a double-polished thin substrate nitride epitaxial layer, which comprises the following steps of: providing a double-polished thin substrate, and carrying out first annealing treatment on a first surface of the double-polished thin substrate; manufacturing an anti-warping structure on the first surface, wherein the anti-warping structure comprises a low-temperature AlInN nitride back buffer layer, an AlInN back epitaxial layer, a GaN back epitaxial layer and an AlGaN back epitaxial layer which are sequentially formed on the first surface; carrying out second annealing treatment on the second surface of the double-polished thin substrate; a low-temperature nitride buffer layer and a nitride layer are sequentially arranged on the second surface; and etching the low-temperature AlInN nitride back buffer layer by using a wet method to separate the double-polished thin substrate from the anti-warping structure to obtain the double-polished thin substrate nitride epitaxial layer. According to the invention, the anti-warping structure is grown on the back of the double-polished thin substrate, the stress opposite to that of the epitaxial layer grown on the front side is generated, the quality of the epitaxial layer is improved, a buffer layer is prevented from growing on the front side, and a high-quality nitride epitaxial layer is generated.

Description

technical field [0001] The invention relates to the technical field of semiconductor epitaxy, in particular to a method for preparing a double-thin substrate nitride epitaxial layer and the epitaxial layer. Background technique [0002] At present, MOCVD epitaxy of GaN-based semiconductor materials is an epitaxial technology grown on heterogeneous substrates. Due to the mismatch between the lattice and thermal expansion between the substrate and the epitaxial layer, the dislocation density and stress of the epitaxially grown crystal material are high, which is easy Warping cracks and other phenomena appear. These dislocations behave as non-radiative recombination centers when the device is working, which affects the efficiency of the device. Applications in the field of electronics; in addition, with the development of markets such as semiconductor lighting and display, the demand for substrates is increasingly shifting to larger sizes, warpage caused by residual stress in G...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/12C23C16/01C23C16/30
Inventor 闫其昂王国斌
Owner JIANGSU INST OF ADVANCED SEMICON CO LTD