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Method for correcting dot product error of variable resistance device array

A resistance device and variable technology, applied in the direction of instruments, electrical digital data processing, special data processing applications, etc., can solve the problems of limited ability to modify output deviation, compensation effect not meeting the requirements, increasing system complexity, etc., to achieve Improve the accuracy rate, reduce learning costs, and fast convergence

Pending Publication Date: 2022-04-05
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compensating at the output rear end of the variable resistance device array will increase the complexity of the system, and this solution does not solve the problem on the source variable resistance device array, so that the final compensation effect is limited by some conditions and cannot be achieved. To meet the requirements, for example, when the correction scheme faces a large dynamic range of input and weights, the ability to modify the output deviation is limited, and the correction effect is insufficient.

Method used

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  • Method for correcting dot product error of variable resistance device array
  • Method for correcting dot product error of variable resistance device array
  • Method for correcting dot product error of variable resistance device array

Examples

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Embodiment 1

[0025] In real hardware, the effective conductance matrix and effective resistance matrix of the memristor array can be calculated by measuring the actual output of the memristor array. In this case, the method for correcting the point product error of the variable resistance device array described in the present invention, its flow is as follows figure 2 shown, including the following steps:

[0026] Step 1: Determine the operational parameters of the memristor array

[0027] Put the target conductance matrix G to be written target Converted to the target resistance matrix R target , where G target is the conductance matrix specified in advance, and R target Each element in G is related to G target The elements satisfy the reciprocal relationship. For a memristor array input voltage vector V in and the output current vector I out , the operation result of the memristor should satisfy the relation V in ·G target = I out . To initialize and read the memristor array...

Embodiment 2

[0046] The memristor array circuit can also be simulated by software simulation, and the effective conductance / resistance matrix of the memristor array can be solved without actually measuring the current output to know the current output vector. In this case, in the method for correcting the dot product error of the memristor array described in the present invention, in addition to specifically calculating the effective conductance matrix G of the memristor array effective and the effective resistance matrix R effective Except that the method is different from Example 1, other steps are the same as Example 1. The concrete implementation method of step 2 comprises the following steps:

[0047] Step 2.1: When the circuit needs to consider the line resistance, model the memristor array circuit and establish the circuit equations of the array. A typical array circuit diagram is attached figure 1 As shown, there are a total of R in the figure 11 , R 12 ,...,R NN Total N 2 M...

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Abstract

The invention discloses a method for correcting a dot product error of a variable resistance device array. The method comprises the following steps: (1) initializing a target conductance matrix and writing the target conductance matrix into the variable resistance device array; (2) calculating an effective conductance matrix of the variable resistance device array; and (3) comparing the effective conductance matrix obtained in the step (2) with a target conductance matrix, if a convergence condition is met, finishing the execution of the method, otherwise, continuing to execute the following steps: multiplying a difference matrix by an adjustment coefficient eta to obtain an error conductance matrix, adjusting the resistance value of each variable resistance device on an actual hardware array according to the error matrix, and finally obtaining the resistance value of each variable resistance device on the actual hardware array. In other words, the conductance matrix Gwrite of the actual variable resistance device is adjusted to be Gwrite = G 'write-Gerror; wherein Gerror is an error conductance matrix, and G 'write is a conductance matrix actually written into the variable resistance device last time; and after adjustment, the step (2) and the step (3) are executed repeatedly until the stop condition in the step (3) is met. According to the method, the correction effect of the matrix operation error caused by the line resistance in the variable resistance device array can be remarkably improved, and the method has wide application value and potential.

Description

technical field [0001] The invention relates to an internal calculation method based on a variable resistance device array, in particular to a method for correcting the point product error of the variable resistance device array. Background technique [0002] When the traditional computing architecture is faced with computing tasks with high performance requirements such as artificial intelligence algorithms, its storage-computing separation architecture greatly reduces computing efficiency. In-memory computing can be realized by using variable resistance device (including memristor, PCM, MRAM, etc.) Hughes law and Ohm's law complete the calculation process. This new type of computing architecture has great advantages in terms of power consumption and speed, and is a new type of computing architecture focused on research and development in the post-von Neumann era. Using the cross array of variable resistance devices, the circuit characteristics can be further used to real...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/367
CPCG06F30/367G06F17/16G06F7/5443
Inventor 缪峰梁世军王聪赵懿晨
Owner NANJING UNIV