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Magnetron sputtering cathode capable of rapidly replacing target material and method for replacing target material

A magnetron sputtering and target technology, applied in sputtering coating, metal material coating process, ion implantation coating and other directions, can solve the problems of main vacuum chamber pollution, complicated and time-consuming operation, etc.

Pending Publication Date: 2022-04-12
HEFEI INNOVATION RES INST BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This operation is cumbersome and time-consuming, and it is easy to cause the main vacuum chamber to be polluted

Method used

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  • Magnetron sputtering cathode capable of rapidly replacing target material and method for replacing target material
  • Magnetron sputtering cathode capable of rapidly replacing target material and method for replacing target material
  • Magnetron sputtering cathode capable of rapidly replacing target material and method for replacing target material

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Embodiment Construction

[0030] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments.

[0031] like figure 1 As shown in the figure, the novel magnetron sputtering cathode with rapid target replacement described in this embodiment includes a chimney pressing device 1, a target 2, a target mounting seat 3, a magnet cooling assembly 4, a cathode shield 5, a cavity The body mounting flange 6 and the telescopic drive mechanism 7, wherein the target material mounting seat 3 and the target material 2 are located between the chimney pressing device 1 and the magnetic hoop cooling assembly 4, and the chimney pressing device 1 is ins...

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Abstract

According to the magnetron sputtering cathode capable of rapidly replacing the target material and the target material replacing method, a target material mounting base and the target material are located between a chimney pressing device and a magnetic hoop cooling assembly, the chimney pressing device is mounted on a cavity mounting flange, and the magnetic hoop cooling assembly penetrates through the cavity mounting flange to be connected with a telescopic driving mechanism; and the other end of the telescopic driving mechanism is mounted on the cavity mounting flange. When the target material is replaced, under the driving of the telescopic driving mechanism, the magnetic hoop cooling assembly moves downwards, the supporting lugs on the edge of the target material mounting base are grabbed through a sample transferring system of magnetron sputtering equipment, and the target material mounting base and the target material in the target material mounting base are taken out from the side edge of the cathode shielding cover and then conveyed into a cavity of the sample transferring system; and then a new target material mounting seat and the target material in the chamber are conveyed to the position over the original magnetic hoop cooling assembly through the sample conveying system, and the target material mounting seat is pressed by the chimney pressing device. According to the method, under the condition that the vacuum environment of the main vacuum cavity is not damaged, rapid target replacement is achieved, the target replacement time is greatly shortened, and pollution to the main vacuum cavity is also reduced.

Description

technical field [0001] The invention relates to the technical field of vacuum coating, in particular to a magnetron sputtering cathode capable of rapidly replacing target materials. Background technique [0002] Magnetron sputtering is a type of physical vapor deposition (PVD) and is widely used in the field of material coating. One of the key core technologies of magnetron sputtering is the design and manufacture of magnetron sputtering cathodes. The basic principle is to use the magnetic field to confine charged particles to increase the plasma density to increase the sputtering rate. When the target in the magnetron sputtering cathode needs to be replaced, the traditional method is to take out the magnetron sputtering cathode to replace the target after deflating the main vacuum chamber. After the replacement, put the magnetron sputtering cathode back, and the main vacuum chamber needs to be pumped to the limit vacuum again before it can work normally. This operation is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 李成汪建杜寅昌程厚义赵巍胜张悦
Owner HEFEI INNOVATION RES INST BEIHANG UNIV