Leveling mechanism and leveling method for auxiliary furnace chamber of single crystal furnace

Abstract

The invention relates to a leveling mechanism and a leveling method for an auxiliary furnace chamber of a single crystal furnace. The leveling mechanism comprises a fixing part, a horizontal monitoring part, a control part and a self-adaptive leveling part, the auxiliary furnace chamber inclines due to lifting motion, the horizontal monitoring component monitors the inclination angle and compares the inclination angle with the zero position, and a result is fed back to the control component. And the control component collects the signal sent by the horizontal monitoring component, processes the signal to generate control data, and sends a control instruction to the self-adaptive leveling component. In the self-adaptive leveling component, a motor generates driving force after receiving a control instruction, the driving force is decelerated by a speed reducer to drive a lead screw to rotate, the lead screw drives a tension arm fixed with a lead screw nut to move back and forth along a linear guide rail, and a connecting block at the upper end of the auxiliary furnace chamber is driven to move along with the tension arm, so that the inclination of the auxiliary furnace chamber is corrected. The method is easy to operate and low in time consumption, the inclination amplitude of the auxiliary furnace chamber in the working state can be monitored in real time, self-adaptive adjustment can be rapidly conducted, and it is effectively guaranteed that the flange face of the auxiliary furnace chamber is horizontal in all stages and all the working states.

Description

technical field [0001] The invention belongs to the technical field of single crystal furnace components, and in particular relates to a leveling mechanism and a leveling method for an auxiliary furnace chamber of a single crystal furnace. Background technique [0002] The single crystal furnace is a kind of equipment that melts polycrystalline materials such as polycrystalline silicon with a graphite heater in an inert gas environment, and grows a dislocation-free single crystal by the Czochralski method. During the commissioning and working process of the single crystal furnace, it is often necessary to lift and rotate the auxiliary furnace chamber. During the lifting and rotating process, the sub-furnace chamber needs to bear its own weight and the weight of the ingot, which makes the sub-furnace chamber tilt, causing the ingot to collide with the inner wall of the sub-furnace chamber, and in severe cases, the problem of ingot drop may also occur. In addition, when drawi...

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Problems solved by technology

[0004] In view of this, the present invention aims to propose a leveling mechanism and leveling method for the sub-furnace chamber of a single crystal furnace, so as to solve the complicated and time-consuming operation of level adjustment of the sub-furnace chamber of a single crystal furnace existing in the prior art, which cannot solve different tasks. The problem of tilting of the auxiliary furnace chamber in the state

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