SiC MOSFET repeated short circuit test method with adjustable gate voltage structure

Abstract

The invention discloses a SiC MOSFET repeated short circuit test method with an adjustable gate voltage structure. A bus capacitor bank, an SSCB protection circuit, a to-be-tested device interface, a driving circuit and a driving voltage adjusting circuit are included. Wherein the bus capacitor bank is connected with the high-voltage direct-current source through the circuit breaker S1, the SSCB protection device, the DUT and the bus capacitor bank jointly form a short-circuit test loop, a short-circuit signal is input to the driving chip through the signal generator and is transmitted to the DUT through the driving resistor R1, and the driving voltage regulation circuit is output by the isolation power supply module. The voltage regulating circuit is connected to a power supply pin of a secondary side of the driving chip through the Buck-Boost regulating circuit, a midpoint FB of R1 and R2 in the voltage regulating circuit is connected to a feedback pin FB of the voltage regulating chip, an output of the Buck-Boost chip is connected to a GND of the secondary side of the driving chip through the L1, a GND pin of the voltage regulating chip is connected to the driving chip VCC2, and the method can realize repeated short-circuit experiments of the SiC MOSFET under different driving voltages.

Description

technical field [0001] The invention belongs to the field of reliability testing of power semiconductor devices, in particular to an adjustable gate voltage SiC MOSFET repetitive short-circuit testing method. Background technique [0002] In recent years, with the large-scale operation of power electronic equipment used in new energy power generation, electric vehicles and other non-stationary working conditions, the system reliability problems caused by the aging and failure of power semiconductor devices have become increasingly prominent. The reliability problem has become one of the research hotspots in the field of power electronics. The production and application of a new generation of wide-bandgap semiconductor devices represented by SiC MOSFETs has greatly improved the performance of equipment, but also made power devices face higher electrothermal stress and harsher working conditions. At the same time, the existence of reliability problems such as low reliability ...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a SiC MOSFET short-circuit test method with a Buck-Boost voltage regulation structure, which can simulate different gate-source voltages, Single and repeated short circuit experiments under drain-source voltage

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