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MV-level pulse high-voltage insulation stack and installation method thereof

A pulse high-voltage, stacking technology, applied in the direction of tubes without control devices, non-electron-emitting electrodes, electron-emitting electrodes/cathodes, etc., can solve the problem of large size of vacuum-insulated stacks, increase the surface electron emission threshold, and reduce the field Strong, compact effect

Pending Publication Date: 2022-04-12
NORTHWEST INST OF NUCLEAR TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problems such as the large size of the existing vacuum insulation stack, the present invention provides a MV-level pulse high-voltage insulation stack and its installation method

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  • MV-level pulse high-voltage insulation stack and installation method thereof
  • MV-level pulse high-voltage insulation stack and installation method thereof

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Embodiment Construction

[0031] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. Those skilled in the art should understand that these embodiments are only used to explain the technical principles of the present invention, and are not intended to limit the protection scope of the present invention.

[0032] The invention discloses a MV-level pulse high-voltage insulating stack, which is specifically composed of M insulating rings, M-1 equalizing rings, a cathode body, an anode body and several insulating pull rods. This structure "pushes" the electric field to the middle of the insulation stack through the "depression" of the cathode body and the anode body inside the insulation stack, and realizes that the electric field intensity at 45 degrees along the insulating ring on both sides of the insulating stack is significantly reduced, making the insulating ring 45 degrees along the surface The field strength is more uniform....

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Abstract

The invention provides an MV-level pulse high-voltage insulation stack and an installation method thereof, and mainly solves the problems that an existing vacuum insulation stack is large in size and the like. The MV-level pulse high-voltage insulating stack comprises a cathode body, an anode body, an insulating ring and a grading ring, the insulating rings and the grading rings are alternately arranged at intervals along the axial direction to form an insulating stack body; the inner surface of the insulating ring is a 45-degree conical surface; an arc-shaped bulge is arranged on the inner surface of the grading ring; the anode bodies are arranged on the two sides of the insulating stack body respectively, and a vacuum cavity is formed by the anode bodies and the insulating stack body; the small ends of the conical surfaces of the insulating rings face the anode body, the large ends of the conical surfaces of the insulating rings face the cathode body, and the arc-shaped protrusions of the grading rings face the large ends of the conical surfaces of the insulating rings; annular protrusions are arranged on the inner sides of the cathode body and the anode body, interfaces are arranged on the end faces of the anode body and the cathode body, the cathode body is a high-voltage end and is connected with a negative high-voltage pulse source, and the anode body is a low-voltage end and is grounded.

Description

technical field [0001] The invention belongs to the technical field of pulse power, and in particular relates to an MV-level pulse high-voltage insulation stack for an intense pulse radiation simulation device and an installation method thereof. Background technique [0002] The vacuum insulation stack is an important part of the pulse power device, which is used to realize the high voltage coupling of the device, the physical isolation of the liquid medium of the transmission line and the vacuum area of ​​the load. The withstand voltage level of the insulation stack determines the output efficiency of the load diode. In order to improve its vacuum surface withstand voltage level, when designing the insulation stack, the electric field at the three-junction point of the cathode should be controlled below 30kV / cm, and the electric field should be evenly distributed along the surface of the insulation stack as much as possible to reduce the bombardment of electrons on the surf...

Claims

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Application Information

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IPC IPC(8): H01J21/04H01J19/02H01J19/32H01J19/54H01J9/00
Inventor 周亚伟呼义翔何德雨杨实
Owner NORTHWEST INST OF NUCLEAR TECH
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