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Electrostatic protection structure and manufacturing method thereof

A technology of electrostatic protection and manufacturing method, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of large parasitic resistance and weak electrostatic protection ability, so as to reduce breakdown voltage, improve electrostatic discharge protection ability, and improve electrostatic discharge protection ability. Effect of Voltage Clamping Capability

Pending Publication Date: 2022-04-12
CHANGXIN MEMORY TECH INC
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  • Claims
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Problems solved by technology

[0003] However, since the input and output terminals of integrated circuits generally adopt the smallest process size, the layout of the surrounding electrostatic protection circuit is limited, and the metal connection line of PS mode or ND mode is the longest, making its parasitic resistance the largest, becoming an electrostatic protection circuit. The weakest point

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  • Electrostatic protection structure and manufacturing method thereof
  • Electrostatic protection structure and manufacturing method thereof
  • Electrostatic protection structure and manufacturing method thereof

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Embodiment Construction

[0035] The specific implementation of the electrostatic protection structure and the manufacturing method of the electrostatic protection structure provided by the present application will be described in detail below in conjunction with the accompanying drawings. The following description of at least one exemplary embodiment is merely illustrative in nature and not intended as any limitation of the disclosure, its application or uses. That is, those skilled in the art will understand that they illustrate only exemplary ways that can be implemented, and are not exhaustive. Also, the relative arrangement of components and steps set forth in these embodiments does not limit the scope of the present disclosure unless specifically stated otherwise.

[0036] figure 1 is a schematic diagram of an electrostatic protection structure in an embodiment of the present disclosure. see below figure 1 , the electrostatic protection structure includes: a first diode structure 1 and a secon...

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Abstract

The invention provides an electrostatic protection structure and a manufacturing method of the electrostatic protection structure. The electrostatic protection structure comprises a first diode structure, the first end of the first diode structure is connected with a grounding end, and the second end of the first diode structure is connected with a signal end; the second diode structure is adjacent to the first diode structure, the first end of the second diode structure is connected with the power supply end, and the second end is connected with the signal end; the breakdown voltage of the first diode structure and / or the second diode structure is smaller than a preset threshold value. According to the technical scheme, the first diode structure or the second diode structure is doped, so that avalanche breakdown occurring in a PN junction with lower doping concentration and higher external voltage is changed into Zener breakdown occurring in the PN junction with higher doping concentration; therefore, the electrostatic discharge protection capability of the input and output ends of the integrated circuit is improved.

Description

technical field [0001] The present application relates to the technical field of electrostatic protection for integrated circuits, and in particular to an electrostatic protection structure and a method for manufacturing the electrostatic protection structure. Background technique [0002] With the development of large-scale integrated circuits, the key process feature size is continuously reduced, and the harm caused by electrostatic discharge to integrated circuits is becoming more and more easy. Generally, electrostatic discharge protection circuits are used to protect integrated circuits. The four modes of integrated circuit electrostatic discharge protection are: PS mode, positive charges flow in from the input terminal (I / O) and flow out from the ground terminal (VSS); NS mode, negative charges flow in from the input terminal (I / O), Flow out from the ground terminal VSS; PD mode (positive charge flows in from IO, flows out from the power supply terminal (VDD)); ND mode...

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Application Information

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IPC IPC(8): H01L27/02H01L21/8222
CPCH01L27/0255H01L27/0262H01L27/0814H01L21/823814
Inventor 宋彬
Owner CHANGXIN MEMORY TECH INC
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