Semiconductor device and manufacturing method thereof, memory and electronic equipment

Abstract

The invention provides a semiconductor device and a manufacturing method thereof, a memory and electronic equipment. The semiconductor device comprises a first isolation structure, a second isolation structure and the like which are arranged on a semiconductor substrate. The first isolation structure is arranged around the first gate stack and the second gate stack, and the second isolation structure is arranged between the first gate stack and the second gate stack. The method comprises the following steps: forming a first isolation structure and a second isolation structure on a semiconductor substrate; and forming a first gate stack and a second gate stack which are separated by a second isolation structure in an area enclosed by the first isolation structure, and forming a bit line contact part on the second isolation structure. The memory comprises the semiconductor device in any embodiment of the invention. The electronic device includes a memory. On the premise that the original size and performance of the semiconductor device are not changed, the hammering effect can be effectively restrained, and therefore the problems that the device size is increased, and the signal transmission time is prolonged in an existing scheme of additionally adding circuits are thoroughly solved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, and more specifically, the present disclosure relates to a semiconductor device, a manufacturing method thereof, a memory, and an electronic device. Background technique [0002] With the refinement of the manufacturing process of semiconductor devices such as Dynamic Random Access Memory (DRAM, Dynamic Random Access Memory), the row hammer effect (Row Hammer) often occurs when the size of the device is reduced. The hammer effect refers to the phenomenon that when a certain transistor is repeatedly accessed within a certain period of time, the transistor sharing the bit line with the transistor will be turned on, resulting in the loss of information in the capacitor; the hammer effect is often an inevitable phenomenon of miniaturized DRAM. [0003] In order to overcome the row hammer effect, a conventional method is to repeatedly measure the number of accesses on a specific...

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Problems solved by technology

[0004] In order to solve the problems of enlarged device size and increased signal input / output time in the existing solutions of the hammer effect, the disclosure provides a semiconductor device and its manufacturing method, memory, and electronic equipment, which can be used without affecting the original Suppression of hammer effects without device performance and size

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