A reverse conduction insulated gate bipolar transistor structure and its preparation method
A technology of bipolar transistors and insulated gates, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reducing device reliability, low on-resistance, and exacerbating local accumulation of current, reaching the turn-on voltage Suppression of foldback phenomenon, improvement of distribution uniformity, and effect of increasing processing cost
Active Publication Date: 2022-06-03
安建科技(深圳)有限公司
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Problems solved by technology
However, this method will exacerbate the inhomogeneity of the internal current distribution of the device, reduce the effective conduction area of the chip, and increase the forward and reverse conduction losses of the device.
In addition, when the RC-IGBT is in the reverse conduction state, the temperature rise in the area with high current density is higher. Since the on-resistance of P-I-N diodes generally decreases with the increase of temperature, the on-resistance in the area with higher current density The lower the , this feedback effect will exacerbate the localized current concentration and reduce the reliability of the device
Method used
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Embodiment 1
[0048] FIG. 4 is a schematic diagram of a cell cross-sectional structure of the RC-IGBT device 002 according to the first embodiment of the present invention. device
[0050] When the device 002 is in the initial stage of forward turn-on, its electron current path is as shown in FIG. 5 . as in the previous
[0058] According to the working principle of the device 002 of the present invention, its corresponding structural parameters are designed as follows. It should be pointed out that,
[0059] In addition, the present invention also provides a method of manufacturing the device 002. First, as shown in Figure 6, form n
Embodiment 2
[0062] FIG. 15 is a schematic diagram of a cell cross-sectional structure of an RC-IGBT device 003 according to the second embodiment of the present invention. relatively
Embodiment 3
[0064] FIG. 16 is a schematic diagram of a cell cross-sectional structure of an RC-IGBT device 004 according to the third embodiment of the present invention. relatively
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Abstract
A reverse conduction type insulated gate bipolar transistor structure and a preparation method thereof. The present invention relates to power semiconductor devices. Aiming at the problems existing in RC-IGBT devices in the prior art, the present invention provides a novel RC-IGBT device structure The invention and its manufacturing method are used to improve the uniformity of current distribution inside the device, reduce the conduction loss of the device, and improve the reliability of the device on the basis of effectively suppressing the turn-on voltage snap back phenomenon of the device. The technical solution provided by the present invention is to set an n-type buffer layer inside the n-type field stop layer, the n-type buffer layer is located above the n+ cathode region, and the peak doping concentration of the n-type buffer layer is low The peak doping concentration of the n-type field stop layer.
Description
A reverse-conducting insulated gate bipolar transistor structure and preparation method thereof technical field The present invention relates to power semiconductor devices, particularly reverse-conducting insulated gate bipolar transistors (RC-IGBT) Structure and method of making the same. Background technique Insulated gate bipolar transistors (IGBTs) are key semiconductor components in electronic systems and are widely used in various In medium and high voltage power control systems, such as motor drive, electrical energy conversion, etc. IGBT devices contain three electrodes: collector, emitter poles, and gates used to control device switching. Generally, the traditional IGBT is equivalent to an open base circuit when the gate is turned off The PNP tube, so it does not have reverse freewheeling capability, resulting in the traditional IGBT can only be used as a unidirectional conduction device, that is, the current Can only flow from collector to emitter. Ho...
Claims
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IPC IPC(8): H01L29/739H01L29/06H01L21/331
Inventor 单建安冯浩袁嵩
Owner 安建科技(深圳)有限公司