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Reverse conduction insulation gate bipolar transistor structure and preparation method thereof

A bipolar transistor, insulated gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reducing device reliability, low on-resistance, aggravating local current accumulation, etc., to achieve the turn-on voltage The effect of suppressing the foldback phenomenon, improving the distribution uniformity, and increasing the processing cost

Active Publication Date: 2019-06-07
安建科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method will exacerbate the inhomogeneity of the internal current distribution of the device, reduce the effective conduction area of ​​the chip, and increase the forward and reverse conduction losses of the device.
In addition, when the RC-IGBT is in the reverse conduction state, the temperature rise in the area with high current density is higher. Since the on-resistance of P-I-N diodes generally decreases with the increase of temperature, the on-resistance in the area with higher current density The lower the , this feedback effect will exacerbate the localized current concentration and reduce the reliability of the device

Method used

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  • Reverse conduction insulation gate bipolar transistor structure and preparation method thereof
  • Reverse conduction insulation gate bipolar transistor structure and preparation method thereof
  • Reverse conduction insulation gate bipolar transistor structure and preparation method thereof

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Experimental program
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Embodiment 1

[0048] Figure 4 It is a schematic diagram of the cell cross-sectional structure of the RC-IGBT device 002 according to the first embodiment of the present invention. The composition of the device 002 includes: a collector (222) is located at the bottom of the device; more than one p + Collector region (206) and n + Cathode regions (207) are staggered on the collector electrodes (222); an n-type field stop layer (205) is located on the p + Collector region (206) and n + above the cathode region (207); a n - type drift region (201) is located on the n-type field stop layer (205); more than one groove (210) arranged in parallel from n - The upper surface of the type drift region (201) extends into n - type drift region (201); a gate electrode (223) is formed in a trench (210), and the gate electrode (223) is isolated from the inner wall of the corresponding trench (210) by a gate dielectric layer (211) ; A p-type body region (202) is located in n - above the drift region ...

Embodiment 2

[0062] Figure 15 It is a schematic diagram of the cell cross-sectional structure of the RC-IGBT device 003 according to the second embodiment of the present invention. Compared with the device 002 of the first embodiment of the present invention, the device 003 also has the following characteristics: the n - Buffer layer (208) and the n below it + There is a gap between the cathode regions (207), preferably, the size of the gap can be 0.2-0.5 microns. By setting the interval, it is possible to further avoid electric field punch-through to p + The collector region (206) problem maintains the breakdown voltage of the device from being affected. For the manufacturing method of device 003, the distance can be increased by Figure 12 The energy of p-type ion implantation shown in .

Embodiment 3

[0064] Figure 16 It is a schematic diagram of the cell cross-sectional structure of the RC-IGBT device 004 according to the third embodiment of the present invention. Compared with the device 002 of the first embodiment of the present invention, the device 004 also has the following characteristics: the n - Type buffer layer (208) is also provided with p - type buffer layer (209), preferably, the p - The peak doping concentration of the type buffer layer (209) is at 1e 15 cm -3 ~5e 15 cm -3 . due to p - Type buffer layer (209) behaves as a potential barrier for electrons, through the n - Add p in the buffer layer (208) - The type buffer layer (209) can further increase the resistance of the electron current on this path, thereby more effectively suppressing the turn-on voltage foldback problem. For the manufacturing method of device 004, the p - Type buffer layer (209) can be added by increasing Figure 12 The dose of p-type ion implantation shown in .

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Abstract

The present invention provides a reverse conduction insulation gate bipolar transistor structure and a preparation method thereof. The present invention relates to a power semiconductor device. For the problem in a RC-IGBT device in the prior art, the present invention provides a novel RC-IGBT device structure and a manufacturing method thereof. The uniformity of the current distribution in a device is improved, the conduction loss of the device is reduced, and the reliability of the device is improved on the basis of effectively inhibiting the turn-on voltage snap back of the device. According to the technical scheme provided by the invention, an n-type buffer layer is arranged in an n-type field cut-off layer, the n-type buffer layer is located on an n+ cathode region, and the peak dosage concentration of the n-type buffer layer is lower than that of the n-type cut-off layer.

Description

technical field [0001] The invention relates to a power semiconductor device, especially the structure of a reverse conduction type insulated gate bipolar transistor (RC-IGBT) and its manufacturing method. Background technique [0002] Insulated gate bipolar transistors (IGBTs) are key semiconductor components in electronic systems and are widely used in various medium and high voltage power control systems, such as motor drives and power conversion. An IGBT device contains three electrodes: a collector, an emitter, and a gate that controls the switching of the device. Generally, when the gate is turned off, the traditional IGBT is equivalent to a PNP transistor with an open base, so it does not have the capability of reverse current flow. As a result, the traditional IGBT can only be used as a unidirectional conduction device, that is, the current can only flow from collector to emitter. However, most power circuit systems have the requirement of current bidirectional con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
Inventor 单建安冯浩袁嵩
Owner 安建科技(深圳)有限公司