Driving circuit for inhibiting peak and crosstalk of SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Abstract

The invention relates to a drive circuit for inhibiting SiC MOSFET peak and crosstalk, which is connected in a SiC MOSFET drive circuit, and comprises an upper bridge arm and a lower bridge arm, a voltage totem pole structure circuit is connected between a first positive power supply and a first negative power supply of the lower bridge arm, and the first positive power supply and the first negative power supply of the lower bridge arm are connected with the voltage totem pole structure circuit. The output end of the voltage totem-pole structure circuit is connected with the input ends of the driving resistance circuit and the negative-voltage turn-off voltage pull-up circuit, the output end of the driving resistance circuit is connected with the input ends of the current extraction circuit and the current injection circuit, and the output end of the negative-voltage turn-off voltage pull-up circuit is connected with the grid electrode of the lower bridge arm SiC MOSFET; the upper bridge arm and the lower bridge arm are symmetrically arranged except for a non-negative-voltage turn-off voltage pull-up circuit. According to the invention, the performance advantages of high switching speed and low loss of the SiC MOSFET can be brought into full play, and the additional loss caused by bridge arm crosstalk negative voltage turn-off is suppressed while the switching-on current and the switching-off voltage peak are suppressed.

Description

technical field [0001] The invention belongs to the field of power electronics technology and electrotechnical technology, and designs a driving circuit suitable for SiC MOSFET, especially a driving circuit for suppressing SiC MOSFET peak and crosstalk. Background technique [0002] Compared with silicon-based power devices, silicon carbide (SiC)-based devices have the advantages of faster switching speed and lower conduction loss, and will be more and more widely used in high-efficiency and high-power-density applications, such as photovoltaic inverters. devices, electric vehicles, and wind power. However, the large dv / dt and di / dt caused by the high switching speed of SiC-based devices, as well as the parameters such as parasitic inductance and capacitance in the device package and application circuit, will cause current and voltage overshoot of the device during the switching process And oscillation, which will not only increase the switching loss of the device and aggra...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a driving circuit for suppressing SiC MOSFET spikes and crosstalk, capable of suppressing its turn-on current spikes and voltage spikes, and solving the loss problem caused by traditional bridge arm crosstalk suppression circuits

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