High-power laser diode device and manufacturing method thereof

Abstract

The invention discloses a high-power laser diode device and a manufacturing method thereof. The laser diode device comprises a carrier, a laser module, a tube cap, a first optical lens, a second optical lens and a lens positioning ring. According to the manufacturing method, a laser chip is welded to a substrate through high-temperature solder paste, electrodes are bonded to the two electrodes of the substrate to form a conduction circuit, protection packaging is conducted through a glass cover or white wall glue, laser light-emitting points are arranged to be in a bowl cup shape or a through hole shape, and after the whole substrate is formed, a plurality of corresponding laser modules are formed through cutting. And meanwhile, the plurality of laser modules are respectively connected with each surface of the upper part of the carrier through solder paste welding to form a high-power laser diode. The problems that an existing TO packaging laser diode is low in packaging efficiency, low in yield and the like are solved, the light emitting efficiency of each laser module is effectively improved, multiple laser matrixes are integrated to form a high-power laser, the size is small, the cost of optical elements is reduced, and application universality is facilitated.

Description

technical field [0001] The invention relates to the technical field of laser diodes, in particular to a high-power laser diode device and a manufacturing method thereof. Background technique [0002] At present, most laser diodes on the market adopt TO packaging, that is, Transistor Outline or Through-hole packaging technology, which belongs to the packaging structure of coaxial optical transmission devices. It is developed from the original widely used transistor device packaging and is relatively mature in the industry. However, the power of TO packaging is small, the packaging process is complicated, the yield rate is low, the heat conduction is limited, and it cannot carry the application of high-power LD. [0003] At present, laser diodes on the market have the following deficiencies in the application side: [0004] (1) At present, the process of TO packaging laser diodes on the market is complicated, and custom packaging equipment is required. This kind of packaging ...

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Problems solved by technology

[0004] (1) At present, the process of TO packaging laser diodes on the market is complicated, and custom packaging equipment is required. This kind of packaging has low efficiency and low yield rate, and requires a long length of bonding gold wire and high cost. Touching during the turnover process leads to open or short circuits. greater risk;

[0005] (2) At present, the application power of TO packaged laser diodes in the market is low. If the application needs to integrate high power, multiple diodes are arranged in a matrix and formed by zooming multiple groups of optical elements, which is not only large in size, but also high in cost and complicated to assemble.

[0006] (3) At present, the consistency of concentricity between the center point of the light emission of the laser chip and the center point of the light output of the lens of the TO package laser diode itself in the market is unstable, and the consistency of the light efficiency of a single laser diode itself has certain fluctuations.

[0007] (4) At present, TO packaged laser diodes on the market have multiple pin crossovers, and the parameters cannot be automatically sorted. They can only be tested through manual fixture fixation. The test efficiency is low and error-prone

[0008] (5) Due to the limitations of structural design on the application side, stable heat conduction cannot be achieved after assembly, and the problem of poor light efficiency consistency is prone to occur on the application side of assembly

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