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Two-dimensional Van der Waals ferroelectric tunnel junction memory based on alpha-indium selenide nanosheet and construction method and application thereof

A technology of nanosheets and indium selenide, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low switch state resistance and weak regulation of devices, and achieve resistance value transformation, high resistance value transformation, and device stability sex good effect

Active Publication Date: 2022-04-22
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are few devices with storage function based on α-InSe, and the current transport mode of the device is basically thermionic emission, and the modulation of ferroelectric polarization mainly acts on the Schottky between α-InSe and the electrode. On the potential barrier, affected by the pinning effect of the metal electrode and the semiconductor contact, the control of the ferroelectric polarization on the Schottky barrier is weak, which eventually leads to a relatively low switching state resistance of the device

Method used

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  • Two-dimensional Van der Waals ferroelectric tunnel junction memory based on alpha-indium selenide nanosheet and construction method and application thereof
  • Two-dimensional Van der Waals ferroelectric tunnel junction memory based on alpha-indium selenide nanosheet and construction method and application thereof
  • Two-dimensional Van der Waals ferroelectric tunnel junction memory based on alpha-indium selenide nanosheet and construction method and application thereof

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Embodiment 1

[0056] A two-dimensional van der Waals ferroelectric tunnel junction nonvolatile memory based on α-InSe nanosheets:

[0057] The thickness of α-indium selenide nanosheet is 12nm, the thickness of few-layer hexagonal boron nitride is 8nm, the thickness of few-layer graphene is 5nm, and the metal electrode deposited on the surface of few-layer hexagonal boron nitride is Cr (thickness is 5nm). The metal electrode on the surface of the few-layer graphene is Au (thickness is 50nm), and the target substrate is an insulating silicon substrate (thickness is 300nm).

[0058] The construction method is as follows:

[0059] (1) Cut the neat target substrate to the required size and set it aside.

[0060] (2) Preparation of α-indium selenide nanosheets, few-layer hexagonal boron nitride and few-layer graphene by micromechanical exfoliation method: put the corresponding bulk materials on the blue film tape, and slowly tear the tape about ten times to obtain Materials corresponding to the...

Embodiment 2

[0067] The structure of the two-dimensional van der Waals ferroelectric tunneling junction nonvolatile memory device based on α-indium selenide nanosheets in this embodiment is basically the same as that in Embodiment 1, except that the material of the tunneling dielectric layer used is different. The dielectric layer is hafnium oxide (thickness: 8nm) prepared by atomic layer deposition technology.

[0068] The construction method is as follows:

[0069] (1) Cut the neat target substrate to the required size and set it aside.

[0070] (2) Preparation of α-indium selenide nanosheets and few-layer graphene by micromechanical exfoliation method: put the corresponding bulk material on the blue film tape, and slowly tear the tape about ten times to obtain a material with a corresponding thickness. , the thickness of α-indium selenide nanosheets is 12nm, and the thickness of few-layer graphene is 5nm.

[0071] (3) Transfer the α-indium selenide nanosheets and few-layer graphene ob...

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Abstract

The invention discloses a two-dimensional Van der Waals ferroelectric tunnel junction memory based on alpha-indium selenide nanosheets and a construction method and application thereof, and relates to the technical field of semiconductor materials and devices. The memory comprises a metal electrode, few layers of hexagonal boron nitride or hafnium oxide, alpha-indium selenide nanosheets, few layers of graphene and a target substrate, the few-layer graphene completely covers the surface of the target substrate, the alpha-indium selenide nanosheet partially covers the surface of the few-layer graphene, and the few-layer hexagonal boron nitride or hafnium oxide completely covers the surface of the alpha-indium selenide nanosheet; and the two metal electrodes are respectively deposited on the surface of the few-layer hexagonal boron nitride or hafnium oxide and the surface of the few-layer graphene. According to the method, the advantages of the two-dimensional ferroelectric material are exerted, the memory which is good in stability and capable of achieving high resistance value conversion is obtained through a simple and high-universality method, and the method has important significance in the field of nonvolatile memories.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and devices, in particular to a two-dimensional van der Waals ferroelectric tunnel junction memory based on α-indium selenide nanosheets and its construction method and application. Background technique [0002] With the continuous improvement of the level of science and technology, various production and living activities engaged in by human beings generate a large amount of data all the time. According to the International Data Corporation IDC, the total amount of global data will reach 175 zettabytes in 2025. How to store data more efficiently, with high density, and with high stability has become an urgent problem to be solved. Ferroelectric tunnel junction memory based on ferroelectric materials has attracted more and more attention in data storage due to its stable ferroelectric polarization, extremely fast switching speed and ultra-high durability. [0003] However, the fer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L29/51
CPCH01L29/6684H01L29/78391H01L29/516Y02P70/50
Inventor 张跃汤文辉张铮于慧慧高丽张先坤洪孟羽曾浩然卫孝福
Owner UNIV OF SCI & TECH BEIJING