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Implementation method of semiconductor blue laser module with adjustable pulse width

A realization method and laser technology, applied in the direction of semiconductor lasers, semiconductor laser devices, lasers, etc., can solve the problems of inability to switch pulse width freely, low peak power, small volume, etc., and achieve flexible and adjustable power, high cost performance, and reduced volume Effect

Active Publication Date: 2022-04-26
杭州晟创激光科技有限公司
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention is to overcome the shortcomings of low peak power, large volume and inability to freely switch the pulse width of the semiconductor blue light laser module in the prior art, and provides a high peak power, small volume, and pulse width that can be in continuous and ns-level pulses Output free tuning switch, and realization method of adjustable pulse width semiconductor blue light laser module with pulse synchronous output self-calibration function

Method used

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  • Implementation method of semiconductor blue laser module with adjustable pulse width
  • Implementation method of semiconductor blue laser module with adjustable pulse width

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Embodiment Construction

[0028] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0029] Such as figure 1 and figure 2 In the described embodiment, a method for realizing an adjustable pulse width semiconductor blue light laser module includes the packaging of the sub-module 3 and the overall assembly of the laser module, and the packaging of the sub-module 3 includes the following steps:

[0030] Step 1, packaging several COS blue light semiconductor laser chips 8 at equal intervals on the heat sink carrier 6;

[0031] Step 2, install the drive circuit control board 7 and the high-speed photodetector PD chip 12 on the heat sink carrier 6, and realize the positive and negative connections between the drive circuit control board 7 and the COS blue light semiconductor laser chip 8 respectively through gold wire bonding. Pole and the positive and negative poles of the high-speed photodetector PD chip 12 are electrically conn...

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Abstract

The invention discloses an implementation method of a semiconductor blue laser module with adjustable pulse width. The device comprises a shell, a polarization beam combiner, an output mirror and a plurality of sub-modules are installed on the shell, the polarization beam combiner is arranged in front of the sub-modules, the output mirror is arranged in front of the polarization beam combiner, and each sub-module comprises a heat sink carrier installed on the shell. A driving circuit control board, a high-speed photoelectric detector PD chip and a plurality of COS blue-light semiconductor laser chips are mounted on the heat sink carrier, a substrate of the driving circuit control board is a PCB (printed circuit board) made of aluminum nitride ceramics or FR4 materials, and the driving circuit control board is electrically connected with the high-speed photoelectric detector PD chip and the COS blue-light semiconductor laser chips respectively. And the COS blue light semiconductor laser chip corresponds to the polarization beam combiner in position. The invention has the following beneficial effects: high peak power; the size is small; the pulse width can be freely tuned and switched between continuous pulse output and ns-level pulse output; and a pulse synchronous output self-calibration function is realized.

Description

technical field [0001] The invention relates to the technical field related to industrial laser processing, in particular to a realization method of a semiconductor blue light laser module with adjustable pulse width. Background technique [0002] High peak power lasers are widely used in welding, material surface treatment and other industrial processing fields. At present, the infrared band is mainly used in such fields. Compared with the blue light 450nm band, the light absorption of non-ferrous metals in the infrared band is much lower than that of blue light. The intensity efficiency of copper absorbing blue light is 13 times that of absorbing infrared light, which can reach 70%. [0003] With the gradual rise of new energy vehicles, the demand for non-ferrous metal processing is becoming stronger and stronger, such as battery electrode welding, terminal welding, etc. However, the current disadvantages are that most of the existing semiconductor laser blue laser module...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/40H01S5/042H01S5/0683H01S5/0225H01S5/02253H01S5/02255H01S5/023H01S5/02315B23K26/21
CPCH01S5/4025H01S5/0428H01S5/06835H01S5/0225H01S5/02253H01S5/02255H01S5/023H01S5/02315B23K26/21
Inventor 丛海兵陶良泽巩少斌
Owner 杭州晟创激光科技有限公司
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