Preparation method and preparation device of high-purity silicon core

Abstract

The invention provides a high-purity silicon core preparation method and device, and relates to the technical field of polycrystalline silicon production.The high-purity silicon core preparation method comprises the following steps that in the starting stage, a silicon core is placed in a reaction container, and the surface temperature of the silicon core is increased; introducing a preheated material into the reaction container to enable the silicon core to grow; a growth stage: introducing a preheated material into the reaction container, and increasing the surface temperature of the silicon core to enable the silicon rod to grow rapidly; in the adjusting stage, the silicon rod is repaired; taking out the repaired silicon rod from the reaction container, and cutting to form a plurality of high-purity silicon cores; wherein the flow rate of the preheated material in the starting stage is 800-1200 kg / h, and the flow rate of the preheated material in the growth stage is 4000-5500 kg / h. According to the preparation method of the high-purity silicon core, the problems of impurity introduction and non-uniform quality of the silicon core in the preparation process of the silicon core can be relieved, so that the production quality is improved.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a high-purity silicon core preparation method and a preparation device. Background technique [0002] At present, in the production of polysilicon, the following methods are often used: install multiple thin silicon cores as carriers in a chemical vapor deposition (CVD) reactor, and build silicon core beams to form a conductive circuit. When the CVD reactor is in operation, the surface of the silicon rod is maintained at a certain temperature range by means of electric heating, and silicon-containing gas and reducing gas are introduced into the furnace to achieve the reaction conditions, and elemental silicon is deposited on the surface of the silicon rod to realize polysilicon Great growth. Since the carrier fine silicon cores prepared from polysilicon in the reduction furnace cannot be completely separated in the finished product, the impurity content of the sil...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a high-purity silicon core preparation method and a preparation device to alleviate the technical problems that impurities are easily introduced during the preparation process of the silicon core in the prior art and the quality of the silicon core is not uniform

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