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High-purity gallium arsenide polycrystal and preparation device and method thereof

A gallium arsenide, high-purity technology, applied in the field of high-purity gallium arsenide polycrystal and its preparation device, can solve the problems of difficulty in reducing Si and S, and achieve the effect of improving the purity

Active Publication Date: 2022-04-29
广东先导微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to reduce impurities such as Si and S in the current polycrystalline synthesis process.

Method used

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  • High-purity gallium arsenide polycrystal and preparation device and method thereof
  • High-purity gallium arsenide polycrystal and preparation device and method thereof
  • High-purity gallium arsenide polycrystal and preparation device and method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A device for preparing high-purity gallium arsenide polycrystalline in this embodiment, the schematic diagram of its structure is as follows figure 1 shown. It includes a synthesis furnace equipped with a heater 1 and a temperature measuring device 2. A quartz tube 3 is placed horizontally in the synthesis furnace. The head of the quartz tube is provided with a sealing fixture 4 and a gas delivery pipe 5. One end of the gas delivery pipe extends into the In the quartz tube, the gas transmission pipe outer end is provided with a gas transmission switch valve 6; the tail gas discharge pipe 7 is arranged at the tail of the quartz tube, and the tail gas discharge pipe is connected to the tail gas recovery device 8, and the tail gas discharge switch valve 9 is arranged on the tail gas discharge pipe; the inner pipe of the quartz tube A quartz boat 10 containing As is placed at the mouth, and a quartz boat 11 containing Ga is placed at the end of the tube. The quartz boats c...

Embodiment 2

[0053] A device for preparing high-purity gallium arsenide polycrystalline in this embodiment, the schematic diagram of its structure is as follows figure 1 shown. It includes a synthesis furnace equipped with a heater 1 and a temperature measuring device 2. A quartz tube 3 is placed horizontally in the synthesis furnace. The head of the quartz tube is provided with a sealing fixture 4 and a gas delivery pipe 5. One end of the gas delivery pipe extends into the In the quartz tube, the gas transmission pipe outer end is provided with a gas transmission switch valve 6; the tail gas discharge pipe 7 is arranged at the tail of the quartz tube, and the tail gas discharge pipe is connected to the tail gas recovery device 8, and the tail gas discharge switch valve 9 is arranged on the tail gas discharge pipe; the inner pipe of the quartz tube A quartz boat 10 containing As is placed at the mouth, and a quartz boat 11 containing Ga is placed at the end of the tube. The quartz boats c...

Embodiment 3

[0064] A device for preparing high-purity gallium arsenide polycrystalline in this embodiment, the schematic diagram of its structure is as follows figure 1 shown. It includes a synthesis furnace equipped with a heater 1 and a temperature measuring device 2. A quartz tube 3 is placed horizontally in the synthesis furnace. The head of the quartz tube is provided with a sealing fixture 4 and a gas delivery pipe 5. One end of the gas delivery pipe extends into the In the quartz tube, the gas transmission pipe outer end is provided with a gas transmission switch valve 6; the tail gas discharge pipe 7 is arranged at the tail of the quartz tube, and the tail gas discharge pipe is connected to the tail gas recovery device 8, and the tail gas discharge switch valve 9 is arranged on the tail gas discharge pipe; the inner pipe of the quartz tube A quartz boat 10 containing As is placed at the mouth, and a quartz boat 11 containing Ga is placed at the end of the tube. The quartz boats c...

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Abstract

The invention belongs to the technical field of semiconductor materials, and discloses a high-purity gallium arsenide polycrystal and a preparation device and method thereof. The high-purity gallium arsenide polycrystal is a D-shaped gallium arsenide polycrystal rod with the Si element smaller than or equal to 15 PPB, the S element smaller than or equal to 5 PPB, the total content of other impurity elements smaller than or equal to 80 PPB, the diameter of 72-155 mm, the length of 450-550 mm and the height larger than 50 mm. The method comprises the following steps: respectively putting arsenic and gallium into a synthetic furnace of a quartz boat, heating As to 630-670 DEG C under a hydrogen condition to sublimate arsenic into arsenic gas, heating Ga to 1250-1280 DEG C to react, and reacting impurities of arsenic with hydrogen; and solidifying the synthesized gallium arsenide liquid into a high-purity gallium arsenide polycrystalline rod by controlling a temperature curve through a program. The method provided by the invention can significantly reduce the impurity content and increase the diameter of the synthesized polycrystalline rod, and can be used for manufacturing semi-insulating single crystals with excellent performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a high-purity gallium arsenide polycrystal and a preparation device and method thereof. Background technique [0002] For gallium arsenide polycrystalline materials to be used to prepare high-quality, high-performance semiconductors and semi-insulating gallium arsenide substrates, high-purity gallium arsenide polycrystalline materials are usually used as raw materials to grow gallium arsenide single crystals. [0003] The horizontal gradient solidification method is the main method for preparing high-purity gallium arsenide polycrystals. Patent CN 108517560 A discloses a gallium arsenide polycrystalline synthesis process, including the following steps: S1: put high-purity arsenic and high-purity gallium into the first clean PBN boat and the first clean PBN boat according to the ratio of 1.15-1.1:1 In the second PBN boat; S2: Place the quartz tube hori...

Claims

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Application Information

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IPC IPC(8): C30B29/42C30B28/06
CPCC30B29/42C30B28/06
Inventor 王金灵周铁军马金峰罗小龙
Owner 广东先导微电子科技有限公司