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Method and device for determining overlay compensation parameters of mask, and terminal

A technology for overlay compensation parameters and determination methods, which is applied in the direction of photolithography exposure device, microlithography exposure equipment, pattern surface photolithography technology, etc., can solve the problems of high cost, long time, complicated process operation, etc. To achieve the effect of improving efficiency, improving flexibility and reducing costs

Pending Publication Date: 2022-04-29
全芯智造技术有限公司
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  • Description
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Problems solved by technology

[0006] In the existing technology, it is necessary to optimize the overlay compensation parameters based on the results of the trial production, and then try the production again and re-optimize, so that the optimal overlay compensation parameters can be obtained after multiple rounds, resulting in complicated process operations, long time and high cost. high

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  • Method and device for determining overlay compensation parameters of mask, and terminal
  • Method and device for determining overlay compensation parameters of mask, and terminal
  • Method and device for determining overlay compensation parameters of mask, and terminal

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Embodiment Construction

[0037] In the prior art, for a mask whose optimal overlay parameters have been determined for a certain layer of a product, it may be necessary to remake the mask. For example, when the original mask has serious defects or the design layout needs to be modified, the original mask will be discarded, and a new mask needs to be made according to the new layout, or when the original mask is aging and needs to be remade , it is necessary to install the old layout to make a new mask, and it is also necessary to re-determine the optimal overlay compensation parameters for the newly made mask.

[0038] The inventors of the present invention have found through research that in the prior art, it is necessary to rely on the results of trial production to optimize the overlay compensation parameters, and then to conduct trial production and re-optimization. Every time trial production, the exposure process of the wafer needs to be reworked. , at the same time, users need to spend time opt...

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PUM

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Abstract

The invention discloses a method and device for determining overlay compensation parameters of a mask plate and a terminal, and the method comprises the steps: determining a plurality of positioning points on a first mask plate, obtaining the position of each positioning point on the first mask plate, and enabling the number of the plurality of positioning points to be not less than a preset number; determining the position of each positioning point in the plurality of positioning points on a second mask; based on each positioning point, determining a deviation vector formed by the positioning point on the first mask and the second mask; calculating an overlay compensation parameter deviation value based on the positions of the plurality of positioning points on the second mask; and determining the overlay compensation parameter of the second mask according to the overlay compensation parameter of the first mask and the overlay compensation parameter deviation value. According to the invention, the efficiency of determining the overlay compensation parameter of the mask can be improved, and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method, device and terminal for determining overlay compensation parameters of a mask. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the process nodes of traditional integrated circuits are gradually reduced, and the size of integrated circuit devices is continuously reduced. In the integrated circuit manufacturing process, the requirements for overlay accuracy between different film layers are getting higher and higher. The device and structure of the chip are formed layer by layer through the production process. Therefore, for each wafer that has completed a certain exposure process, the overlay (Overlay) results between key layers can be used to measure the quality of this layer. The degree of deviation between the pattern and the pattern of the previous layer has become one of the most important...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70633G03F7/70491
Inventor 不公告发明人
Owner 全芯智造技术有限公司
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