Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor device

A semiconductor and metal wiring technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as low device integration

Pending Publication Date: 2022-05-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, the application proposes a semiconductor device to solve the problem of low device integration

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0014] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductors, in particular to a semiconductor device, which comprises a semiconductor substrate on which a chip area and a cutting line area are formed; the first sealing ring is arranged between the chip area and the cutting line area, and the first sealing ring is arranged around the chip area; wherein a vertical natural capacitor is formed in the first sealing ring, and the vertical natural capacitor is integrated in the sealing ring, so that the integration level of the chip is higher, the space is saved, and the miniaturization of the chip is achieved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, and in particular to a semiconductor device. Background technique [0002] In an integrated circuit of a semiconductor chip, a seal-ring has a great influence on the reliability of the chip. A conventional semiconductor chip includes an integrated circuit region and a seal-ring arranged on the periphery of the semiconductor chip. Wherein, the integrated circuit region may include various electronic devices, such as passive devices and active devices formed on a substrate. The sealing ring is interposed between the scribe lane (Scrbe Lane, SL) of the wafer and the integrated circuit region (circuit Region). When the wafer dicing process is performed along the dicing street, the sealing ring can block unwanted stress extension and cracking from the dicing street to the chip caused by the above-mentioned wafer dicing process. Moreover, the chip semiconductor device also has the ab...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/31H01L23/528H01L23/64
CPCH01L23/3171H01L23/642H01L23/528H01L23/5283
Inventor 柳圣浩张欣杨涛赵劼
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com