Czochralski single crystal thermal field and re-feeding process for thermal field

A single crystal, Czochralski technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., to achieve the effect of improving the quality of single crystal, reducing the broken rate of single edge, and improving the hit rate of resistivity

Pending Publication Date: 2022-05-13
内蒙古中环晶体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a Czochralski single crystal thermal field and a re-injection process for the thermal field, which solves the problem of not changing the structure of thermal field components such as solidification insulation cylinder, diversion cylinder, graphite / carbon carbon crucible, etc. in the prior art. Under the circumstances, the technical problem of maximizing the crystal performance parameters, reducing the rate of single-sided bract breakage and production efficiency

Method used

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  • Czochralski single crystal thermal field and re-feeding process for thermal field
  • Czochralski single crystal thermal field and re-feeding process for thermal field
  • Czochralski single crystal thermal field and re-feeding process for thermal field

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Effect test

Embodiment 1

[0059] The diameter of the quartz crucible 10 is 28 inches. According to the limitation of the structural space of the thermal field of the single crystal furnace and the arrangement of the structure of the original graphite / carbon carbon crucible 20 and the heater 100, the height of the quartz crucible 10 is 20mm higher than that of the original conventional quartz crucible, and correspondingly, the supporting crucible 30 The height is 20mm, and the height of the first washer 60 and the second washer 80 are both 20mm. The distance from the lower end surface of the draft tube 60 to the molten silicon liquid level in the quartz crucible 10 is 20±2mm.

[0060] In this embodiment, the average seeding speed is 200-400mm / h, the increase of thermal field power is 1.5-4KW, and the variation of seeding power is shown in Table 1.

Embodiment 2

[0062] The diameter of the quartz crucible 10 is 30 inches. According to the limitation of the structural space of the thermal field of the single crystal furnace and the arrangement of the structure of the original graphite / carbon-carbon crucible 20 and the heater 100, the height of the quartz crucible 10 is 60mm higher than that of the original conventional quartz crucible. Correspondingly, the supporting crucible 30 The height is 60mm, and the heights of the first washer 60 and the second washer 80 are both 60mm. The distance from the lower end surface of the draft tube 60 to the molten silicon liquid level in the quartz crucible 10 is 20±2mm.

[0063] In this embodiment, the average seeding speed is 200-400mm / h, the increase of thermal field power is 1.2-3.5KW, and the variation of seeding power is shown in Table 1.

Embodiment 3

[0065] The diameter of the quartz crucible 10 is 32 inches. According to the limitation of the structural space of the thermal field of the single crystal furnace and the arrangement of the structure of the original graphite / carbon carbon crucible 20 and the heater 100, the height of the quartz crucible 10 is 80mm higher than that of the original conventional quartz crucible. Correspondingly, the supporting crucible 30 The height is 80mm, and the heights of the first washer 60 and the second washer 80 are both 80mm. The distance from the lower end surface of the draft tube 60 to the molten silicon liquid level in the quartz crucible 10 is 20±2mm.

[0066] In this embodiment, the average seeding speed is 200-400mm / h, the increase of thermal field power is 1-3KW, and the variation of seeding power is shown in Table 1.

[0067] From the above analysis, it can be seen that when the seeding speed is greater than 300mm / h, it can be judged that the stable temperature is low. At this...

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Abstract

The Czochralski single crystal thermal field comprises a quartz crucible, a graphite / carbon-carbon crucible, an upper curing heat preservation cylinder, a middle curing heat preservation cylinder and a flow guide cylinder, and further comprises a supporting crucible arranged on the upper end face of the graphite / carbon-carbon crucible and a supporting heat preservation cylinder arranged between the upper curing heat preservation cylinder and the middle curing heat preservation cylinder; the upper end face of the supporting crucible is lower than the upper end face of the quartz crucible, and the height from the upper end face of the supporting crucible to the upper end face of the graphite / carbon crucible is a fixed value; the supporting heat preservation cylinder is connected with the upper curing heat preservation cylinder and the middle curing heat preservation cylinder, and the height of the supporting crucible is the same as that of the supporting heat preservation cylinder. According to the invention, under the condition of not changing the structures of the existing graphite / carbon-carbon crucible, the heater and all the curing heat preservation cylinders, a new quartz crucible with a certain height compared with the conventional quartz crucible is reconfigured, and re-throwing production is carried out in a new thermal field, so that not only can metal impurities entering the czochralski single crystal be reduced, but also the quality of the single crystal can be improved, and the single-edge bract breaking rate can be reduced.

Description

technical field [0001] The invention belongs to the technical field of Czochralski single crystal manufacturing, and in particular relates to a Czochralski single crystal thermal field and a re-injection process for the thermal field. Background technique [0002] In the Czochralski single crystal process, compared with other thermal field components such as curing insulation cylinder, heater, graphite / carbon carbon crucible, etc., the structure of the quartz crucible directly affects the performance parameters and production efficiency of the single crystal crystal. How to maximize crystal performance parameters and production efficiency and reduce single-edge breakage rate without changing the structure of thermal field parts such as curing insulation cylinder, guide cylinder, heater, graphite / carbon carbon crucible, etc. , is the key to processing silicon wafers with large size, high quality and low cost. Contents of the invention [0003] The invention provides a Czoc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B15/12C30B15/20C30B29/06
CPCC30B15/00C30B15/12C30B15/20C30B29/06
Inventor 吴树飞郝瑞军赵国伟周泽刘振宇杨瑞峰刘学王建宇
Owner 内蒙古中环晶体材料有限公司
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