Photodiode structure with dark current indication function and photoelectric sensor

Abstract

The invention provides a photodiode structure with a dark current indication function. The photodiode structure comprises a photosensitive photodiode and a reference photodiode, the photosensitive surface of the reference photodiode is provided with a light blocking layer, and the dark current of the photosensitive photodiode and the dark current of the reference photodiode have a fixed multiple relationship. The invention further provides a photoelectric sensor which comprises a processing module and the photodiode structure. Through the structural design, the photodiode structure can output two paths of current signals, accurate incident light current can be obtained only by subtracting the two paths of current signals in actual work, the purposes of eliminating dark current and reducing noise are finally achieved, the dark current of the photodiode can be eliminated without additionally arranging a peripheral device, and the cost is reduced. Therefore, the solar cell has the advantages of simple structure and low cost, and the photoelectric conversion efficiency is further improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection equipment, and in particular relates to a photodiode structure and a photoelectric sensor with dark current indication function. Background technique [0002] As the core device of the photoelectric sensor, the photodiode can be used for distance detection, contact alarm and gesture recognition. In these applications, the photodiode receives the scattered signal light and converts the light signal into an electrical signal output. During the entire receiving process, the photodiode’s ability to collect scattered signal light and photoelectric conversion efficiency are two key factors. In order to improve the above two performances, the most common solution in existing designs is to increase the aperture of the photodiode and the absorption layer. However, the larger the aperture and the thicker the absorbing layer will significantly increase the dark current of the photodiode, ther...

AI Technical Summary

Problems solved by technology

During the entire receiving process, the photodiode’s ability to collect scattered signal light and photoelectric conversion efficiency are two key factors. In order to improve the above two performances, the most common solution in existing designs is to increase the aperture of the photodiode and the absorption layer. However, the larger the aperture and the thicker the absorbing layer will significantly increase the dark current of the photodiode, thereby increasing the noise

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