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Magnetic tunnel junction based on all-oxide single crystal thin film material and preparation method thereof

A technology of magnetic tunnel junction and single crystal thin film, applied in the field of magnetic thin film functional materials, can solve the problems of low magnetoresistance and low response speed, and achieve the effect of improving magnetoresistance and sensitivity.

Active Publication Date: 2022-05-13
CHINA SOUTHERN POWER GRID DIGITAL GRID RES INST CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] Based on this, it is necessary to provide a magnetic tunnel junction based on an all-oxide single crystal thin film material and its preparation method for the problems of low magnetoresistivity and low response speed in the prior art

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  • Magnetic tunnel junction based on all-oxide single crystal thin film material and preparation method thereof
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  • Magnetic tunnel junction based on all-oxide single crystal thin film material and preparation method thereof

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[0032] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the application are given in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.

[0034] It will be understood that when an element or layer is referred to as being "on," "adjacent," "con...

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Abstract

The invention relates to a magnetic tunnel junction based on an all-oxide single crystal thin film material and a preparation method thereof. The magnetic tunnel junction comprises a semimetal oxide free layer; the insulating oxide tunneling layer is positioned on the semimetal oxide reference layer; the semimetal oxide reference layer is positioned on the insulating oxide tunneling layer; wherein the semi-metal oxide reference layer and the semi-metal oxide free layer are made of nickel cobaltate materials, and the thickness of the semi-metal oxide reference layer is larger than that of the semi-metal oxide free layer, so that the resistance value of the magnetic tunnel junction is changed under the action of an external magnetic field. The magnetic tunnel junction material prepared by the preparation method provided by the invention has the advantages of higher magnetoresistive rate, faster response speed, lower power consumption and simple preparation process, and meets the development requirements of miniaturization, high performance, high response rate and low power consumption of the current magnetic tunnel junction storage and sensing device.

Description

technical field [0001] The present application relates to the field of magnetic thin film functional materials, in particular to a magnetic tunnel junction based on an all-oxide single crystal thin film material and a preparation method thereof. Background technique [0002] Magnetic tunnel junctions with perpendicular magnetic anisotropy are expected to be the key components of next-generation solid-state high-density non-volatile memory devices and high-sensitivity magnetic sensors, with the characteristics of high sensitivity, high-speed response and low power consumption. When used to measure an external magnetic field, the magnitude of the magnetoresistivity determines the sensitivity of the magnetic tunnel junction, and the response speed affects the working frequency band of the magnetic tunnel junction. However, with the deepening of research, the current traditional metal-based magnetic tunnel junction has a bottleneck in the increase of reluctance (mostly no more t...

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Application Information

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IPC IPC(8): H01L43/10H01L43/08H01L43/12
CPCH10N50/85H10N50/01H10N50/10
Inventor 李鹏田兵李立浧刘仲吕前程骆柏锋尹旭张佳明王志明陈仁泽徐振恒韦杰谭则杰林秉章樊小鹏孙宏棣林力
Owner CHINA SOUTHERN POWER GRID DIGITAL GRID RES INST CO LTD
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