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Magnetic tunnel junction based on all-oxide single crystal thin film material and preparation method thereof

A technology of magnetic tunnel junction and single crystal thin film, applied in the field of magnetic thin film functional materials, can solve the problems of low response speed and low magnetoresistance, and achieve the effect of improving magnetoresistance and sensitivity.

Active Publication Date: 2022-07-29
CHINA SOUTHERN POWER GRID DIGITAL GRID RES INST CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0003] Based on this, it is necessary to provide a magnetic tunnel junction based on an all-oxide single crystal thin film material and its preparation method for the problems of low magnetoresistivity and low response speed in the prior art

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  • Magnetic tunnel junction based on all-oxide single crystal thin film material and preparation method thereof
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  • Magnetic tunnel junction based on all-oxide single crystal thin film material and preparation method thereof

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[0032] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the related drawings. Embodiments of the present application are presented in the accompanying drawings. However, the application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are for the purpose of describing specific embodiments only, and are not intended to limit the application.

[0034] It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to"...

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Abstract

The invention relates to a magnetic tunnel junction based on an all-oxide single crystal thin film material and a preparation method thereof, comprising: a semi-metal oxide free layer; an insulating oxide tunneling layer located on the semi-metal oxide reference layer; A semi-metal oxide reference layer located on the insulating oxide tunneling layer; wherein, the semi-metal oxide materials of the semi-metal oxide reference layer and the semi-metal oxide free layer are both nickel cobalt oxide materials , and the thickness of the semi-metal oxide reference layer is greater than the thickness of the semi-metal oxide free layer, so that the resistance of the magnetic tunnel junction changes under the action of an external magnetic field. The magnetic tunnel junction material prepared by the preparation method of the present invention has higher magnetoresistance, faster response speed, lower power consumption, and simple preparation process, which is in line with the miniaturization and high performance of current magnetic tunnel junction storage and sensing devices. The development requirements of performance, high response rate and low power consumption.

Description

technical field [0001] The present application relates to the field of magnetic thin film functional materials, in particular to a magnetic tunnel junction based on an all-oxide single crystal thin film material and a preparation method thereof. Background technique [0002] Magnetic tunnel junctions with perpendicular magnetic anisotropy are expected to serve as key components of next-generation solid-state high-density non-volatile memory devices and high-sensitivity magnetic sensors, featuring high sensitivity, high-speed response, and low power consumption. When used to measure the external magnetic field, the size of the magnetoresistance determines the sensitivity of the magnetic tunnel junction, and the response speed affects the working frequency of the magnetic tunnel junction. However, with the deepening of research, the current traditional metal-based magnetic tunnel junction has a bottleneck in the improvement of magnetoresistance (most of which does not exceed 2...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10H01L43/08H01L43/12H10N50/01H10N50/10
CPCH10N50/85H10N50/01H10N50/10
Inventor 李鹏田兵李立浧刘仲吕前程骆柏锋尹旭张佳明王志明陈仁泽徐振恒韦杰谭则杰林秉章樊小鹏孙宏棣林力
Owner CHINA SOUTHERN POWER GRID DIGITAL GRID RES INST CO LTD
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