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Preparation method for improving magnetoresistance of anisotropic magnetoresistor

A technology of anisotropic magnetism and magnetoresistance, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of reducing production capacity and increasing production cycle, so as to increase production time and improve magnetoresistance The effect of reducing the rate and production cycle

Active Publication Date: 2020-11-27
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the existing method of increasing the reluctance of magnetoresistance increases the production cycle and reduces the production capacity, and provides a preparation method for increasing the reluctance of anisotropic magnetoresistance

Method used

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  • Preparation method for improving magnetoresistance of anisotropic magnetoresistor
  • Preparation method for improving magnetoresistance of anisotropic magnetoresistor

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preparation example Construction

[0037] The preparation method provided by the present invention to improve the magnetoresistance rate of anisotropic magnetoresistance specifically comprises the following steps:

[0038] Step 1, cleaning the silicon wafer, and fixing the clean silicon wafer to the sample tray in the sputtering chamber;

[0039] Step 2. Pump the sputtering chamber to a high vacuum. When the vacuum degree is lower than the set value, argon gas is introduced; the set value can be 5×10 -4 Pa;

[0040] Step 3: Turn on the high-energy ion source, the high-energy ion source cleans the silicon wafer, and turn off the high-energy ion source after the cleaning is completed;

[0041] Step 4. Set the sputtering power from 60W to 2000W, set the sputtering bias voltage from 0V to 300V, set the sputtering time from 2min to 30min, and keep the working pressure of the sputtering chamber between 0.2Pa and 2Pa;

[0042] Step 5: Start sputtering NiFe according to the parameters set in Step 4, and at the same t...

Embodiment 1

[0057] The specific preparation process of NiFe is as follows,

[0058] Step 1. Use isopropanol to clean the silicon wafer with an ultrasonic cleaner, and fix the clean silicon wafer to the sample tray in the sputtering chamber;

[0059]Step 2. Use a molecular pump to draw a high vacuum, when the vacuum degree is better than 8×10 -5 At the time of Pa, argon gas with a purity of 99.999% is introduced;

[0060] Step 3: Turn on the high-energy ion source, the high-energy ion source cleans the silicon wafer, and turn off the high-energy ion source after the cleaning is completed;

[0061] Step 4. Set the sputtering power to 200W, the bias voltage to 100V, set the sputtering time to 600s, keep the speed of the sample disc at 5r / min, and keep the working pressure at about 0.3Pa;

[0062] Step 5: Start sputtering NiFe according to the parameters set in Step 4, and at the same time, turn on the high-energy ion source again so that the ion beam of the high-energy ion source irradiate...

Embodiment 2

[0064] The specific preparation process of Ta-NiFe-Ta is as follows;

[0065] Step 1. Use isopropanol to clean the silicon wafer with an ultrasonic cleaner, and fix the clean silicon wafer to the sample tray in the sputtering chamber;

[0066] Step 2. Use a molecular pump to draw a high vacuum to the sputtering chamber. When the vacuum degree is better than 8×10 -5 At Pa, argon with a purity of 99.999% is introduced;

[0067] Step 3: Turn on the high-energy ion source, the high-energy ion source cleans the silicon wafer, and turn off the high-energy ion source after the cleaning is completed;

[0068] Step 4, sputtering the first layer of Ta;

[0069] 4.1) Set the sputtering power to 60W, keep the working pressure at about 0.3Pa, set the bias voltage to 0V, keep the speed of the sample disc at 5r / min, and set the sputtering time to 37s;

[0070] 4.2) Start sputtering Ta according to the parameters set in step 4.1), and at the same time, turn on the high-energy ion source ag...

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Abstract

The invention provides a preparation method for improving the magnetoresistance of an anisotropic magnetoresistor, and solves the problems that the production cycle is prolonged and the productivity is reduced in the existing mode for increasing magnetoresistance of an anisotropic magnetoresistor. The preparation method for improving the magnetoresistance of the anisotropic magnetoresistor comprises the following steps: step 1, cleaning a silicon wafer, and fixing the clean silicon wafer to a sample disc of a sputtering chamber; 2, vacuumizing the sputtering chamber, and introducing argon whenthe vacuum degree is lower than a set value; 3, turning on a high-energy ion source, cleaning the silicon wafer by the high-energy ion source, and turning off the high-energy ion source after the silicon wafer is cleaned; fourthly, setting sputtering power, sputtering bias voltage and sputtering time, and keeping the working air pressure of the sputtering chamber at a set value; and 5, starting to sputter NiFe according to the parameters set in the step 4, and meanwhile, opening the high-energy ion source again to enable the ion beam of the high-energy ion source to irradiate to the silicon wafer.

Description

technical field [0001] The invention relates to a preparation method of a magnetoresistance thin film, in particular to a preparation method for improving the reluctance rate of anisotropic magnetoresistance. Background technique [0002] The magnetoresistance effect (Magneto Resistance, MR) refers to the phenomenon that the change of the external magnetic field causes the resistance to change. This phenomenon is actually the result of the magnetic field affecting the movement of electrons in the resistive material. [0003] The magnetoelectric effects of magnetic materials that have been studied can be divided into the following categories: the normal magnetoresistance (OMR, ordinary MR) of magnetic materials directly caused by the magnetic field, and the anisotropic magnetoresistance (AMR, anisotropic magnetoresistance) associated with the technical magnetization. MR), giant magnetoresistance (CMR, colossal MR) in doped rare earth oxides, giant magnetoresistance (GMR, gian...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/16C23C14/34
CPCC23C14/165C23C14/34
Inventor 冯润东张文伟
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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