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A kind of preparation method of improving anisotropic magnetoresistance magnetoresistance

An anisotropic magnetism and magnetoresistance technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve problems such as increasing production cycle, reducing production capacity, etc., to increase production time and improve magnetoresistance rate, film densification effect

Active Publication Date: 2021-10-15
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the existing method of increasing the reluctance of magnetoresistance increases the production cycle and reduces the production capacity, and provides a preparation method for increasing the reluctance of anisotropic magnetoresistance

Method used

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  • A kind of preparation method of improving anisotropic magnetoresistance magnetoresistance
  • A kind of preparation method of improving anisotropic magnetoresistance magnetoresistance

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preparation example Construction

[0037] The preparation method provided by the present invention to improve the magnetoresistance rate of anisotropic magnetoresistance specifically comprises the following steps:

[0038] Step 1, cleaning the silicon wafer, and fixing the clean silicon wafer to the sample tray in the sputtering chamber;

[0039] Step 2. Pump the sputtering chamber to a high vacuum. When the vacuum degree is lower than the set value, argon gas is introduced; the set value can be 5×10 -4 Pa;

[0040] Step 3: Turn on the high-energy ion source, the high-energy ion source cleans the silicon wafer, and turn off the high-energy ion source after the cleaning is completed;

[0041] Step 4. Set the sputtering power from 60W to 2000W, set the sputtering bias voltage from 0V to 300V, set the sputtering time from 2min to 30min, and keep the working pressure of the sputtering chamber between 0.2Pa and 2Pa;

[0042] Step 5: Start sputtering NiFe according to the parameters set in Step 4, and at the same t...

Embodiment 1

[0057] The specific preparation process of NiFe is as follows,

[0058] Step 1. Use isopropanol to clean the silicon wafer with an ultrasonic cleaner, and fix the clean silicon wafer to the sample tray in the sputtering chamber;

[0059]Step 2: Use a molecular pump to draw a high vacuum, when the vacuum degree is better than 8×10 -5 At the time of Pa, argon gas with a purity of 99.999% is introduced;

[0060] Step 3: Turn on the high-energy ion source, the high-energy ion source cleans the silicon wafer, and turn off the high-energy ion source after the cleaning is completed;

[0061] Step 4. Set the sputtering power to 200W, the bias voltage to 100V, set the sputtering time to 600s, keep the speed of the sample disc at 5r / min, and keep the working pressure at about 0.3Pa;

[0062] Step 5: Start sputtering NiFe according to the parameters set in Step 4, and at the same time, turn on the high-energy ion source again so that the ion beam of the high-energy ion source irradiate...

Embodiment 2

[0064] The specific preparation process of Ta-NiFe-Ta is as follows;

[0065] Step 1. Use isopropanol to clean the silicon wafer with an ultrasonic cleaner, and fix the clean silicon wafer to the sample tray in the sputtering chamber;

[0066] Step 2. Use a molecular pump to draw a high vacuum to the sputtering chamber. When the vacuum degree is better than 8×10 -5 At Pa, argon with 99.999% purity is introduced;

[0067] Step 3: Turn on the high-energy ion source, the high-energy ion source cleans the silicon wafer, and turn off the high-energy ion source after the cleaning is completed;

[0068] Step 4, sputtering the first layer of Ta;

[0069] 4.1) Set the sputtering power to 60W, keep the working pressure at about 0.3Pa, set the bias voltage to 0V, keep the speed of the sample disc at 5r / min, and set the sputtering time to 37s;

[0070] 4.2) Start sputtering Ta according to the parameters set in step 4.1), and at the same time, turn on the high-energy ion source again s...

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Abstract

The invention provides a preparation method for increasing the reluctance ratio of anisotropic magnetoresistance, which solves the problem that the existing way of increasing the reluctance ratio of magnetoresistance will increase the production cycle and reduce the production capacity. The preparation method for improving the magnetoresistance ratio of the anisotropic magnetoresistance comprises the following steps: step 1, cleaning the silicon wafer, and fixing the clean silicon wafer on the sample disc of the sputtering chamber; step 2, pumping a high vacuum to the sputtering chamber, When the vacuum degree is lower than the set value, argon gas is introduced; step 3, open the high-energy ion source, and the high-energy ion source cleans the silicon wafer, and close the high-energy ion source after cleaning; step 4, set the sputtering power, Set the bias voltage for sputtering, set the sputtering time, and keep the working pressure of the sputtering chamber at the set value; step five, start sputtering NiFe according to the parameters set in step four, and at the same time, turn on the high-energy ion source again, The ion beam of the high-energy ion source is irradiated to the silicon wafer.

Description

technical field [0001] The invention relates to a preparation method of a magnetoresistance thin film, in particular to a preparation method for improving the reluctance rate of anisotropic magnetoresistance. Background technique [0002] The magnetoresistance effect (Magneto Resistance, MR) refers to the phenomenon that the change of the external magnetic field causes the resistance to change. This phenomenon is actually the result of the magnetic field affecting the movement of electrons in the resistive material. [0003] The magnetoelectric effects of magnetic materials that have been studied can be divided into the following categories: the normal magnetoresistance (OMR, ordinary MR) of magnetic materials directly caused by the magnetic field, and the anisotropic magnetoresistance (AMR, anisotropic magnetoresistance) associated with the technical magnetization. MR), giant magnetoresistance (CMR, colossal MR) in doped rare earth oxides, giant magnetoresistance (GMR, gian...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/16C23C14/34
CPCC23C14/165C23C14/34
Inventor 冯润东张文伟
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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