Semiconductor device, manufacturing method, three-dimensional memory and storage system

Abstract

The invention provides a semiconductor device, a manufacturing method, a three-dimensional memory and a storage system, and the semiconductor device comprises a substrate which comprises a device region arranged along a first direction; the isolation structure is used for isolating the device region; the gate structure is located on the device region and extends in a second direction perpendicular to the first direction; wherein the device region comprises first doped regions and second doped regions, the first doped regions are arranged on the two sides of the gate structure in the first direction, the second doped regions are arranged on the outer sides of the first doped regions in the second direction, and the doping states of the first doped regions and the second doped regions are different. Through different doping states of the first doped region and the second doped region, the effective channel width of the gate structure in the second direction can be changed, so that the double-hump phenomenon of an Id-Vg curve of the semiconductor device is improved, and the performance of the semiconductor device is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method, a three-dimensional memory and a storage system. Background technique [0002] Shallow trench isolation (STI, shallow trench isolation) is an important component in semiconductor devices, and the shallow trench isolation structure can play a role of lateral isolation for adjacent devices. During the fabrication of semiconductor devices, due to the high temperature in the subsequent thermal oxidation (thermal), annealing and other heat treatment processes, the boron loss at the junction between the gate and the shallow trench isolation and the electric field accumulation at the junction , it will cause the device corner (the junction between the gate and the shallow trench isolation) to turn on first, and the middle of the device (that is, the area directly under the gate) and then turn on, resulting in a double hump (...

AI Technical Summary

Problems solved by technology

[0003] However, the Id-Vg curve has a double hump phenomenon, which has an extremely adverse impact on both process control and device modeling. Therefore, it is necessary to solve this problem through a reasonable process

Images