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Method for growing nitrogen-doped monocrystalline silicon ingot using continuous churnus method and monocrystalline silicon ingot grown by this method

A technology for monocrystalline silicon ingots and polycrystalline silicon, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., and can solve the problems of narrowing the control window and reducing the yield of process crystals, etc.

Pending Publication Date: 2022-05-27
GLOBALWAFERS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As these specifications tighten (LLS, GOI, BMD uniformity, etc.), the control window for defect-free and COP silicon growth has shrunk significantly to significantly reduce the crystal yield of the process

Method used

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  • Method for growing nitrogen-doped monocrystalline silicon ingot using continuous churnus method and monocrystalline silicon ingot grown by this method

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Embodiment Construction

[0038] In the context of this disclosure, "perfect silicon" refers to a Tchaikovsky-grown monocrystalline silicon ingot or from a silicon ingot that meets or exceeds that of Perfect Silicon TM(SunEdison Semiconductor Co., Ltd.) standard Tchaikovsky-grown monocrystalline silicon ingot-cut monocrystalline silicon wafers. These criteria include ingots, or wafers cut from ingots, that meet or exceed industry specifications for coalescence defects, DSOD (direct surface oxide defects), COP (crystal leading to pits or particles), D defects, and I defects, among others. For example, "perfect silicon" wafers may be undetectable FPD (Flow Pattern Defects by Radial Etch) and DSOD (Direct Surface Oxide Defect Particle Count after Electrical Breakdown) and zero I defects ( A defect) is characterized. Archer etching involves applying a dilute aqueous solution of alkaline dichromate and hydrofluoric acid to properly reveal dislocations and other lattice defects in the various crystalline (1...

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Abstract

The invention discloses a method for growing a single crystal silicon ingot by a continuous Czochralski method. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed and the crucible position is fixed. The critical v / G is determined by the hot zone configuration, and continuous supplementation of silicon to the melt during growth enables the ingot to grow at a constant crystal pulling rate consistent with the critical v / G during growth of a substantial portion of the body of the ingot. The continuous replenishment of silicon accompanies periodic or continuous nitrogen addition to the melt to result in nitrogen doped ingots.

Description

[0001] Cross-references to related applications [0002] This application claims priority to both US Non-Provisional Patent Application Nos. 16 / 569,949 and 16 / 570,010 filed on September 13, 2019, the entire disclosures of which are hereby incorporated by reference in their entirety. way to incorporate. technical field [0003] The field of the present disclosure relates to a method of growing a single crystal silicon ingot using the continuous Tchaikovsky process and a single crystal silicon ingot grown by the method. Background technique [0004] Single crystal silicon, which is the starting material for most processes used to manufacture semiconductor electronic components, is typically prepared by the Tchaikovsky ("Cz") method. In this method, polycrystalline silicon is charged into a crucible and the polycrystalline silicon is melted, a crystal is brought into contact with the molten silicon, and a single crystal is grown by slow extraction. After formation of the nec...

Claims

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Application Information

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IPC IPC(8): C30B15/04C30B15/22C30B15/20C30B29/06
CPCC30B15/002C30B15/04C30B15/22C30B15/203C30B29/06
Inventor 卡瑞喜玛·玛丽·哈德森柳在祐
Owner GLOBALWAFERS CO LTD