Unlock instant, AI-driven research and patent intelligence for your innovation.

Formation method of semiconductor structure

A technology of semiconductor and conductive structure is applied in the field of formation of semiconductor structure to achieve the effects of improving flatness, improving reliability and reducing process difficulty

Pending Publication Date: 2022-06-07
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, there is still a problem with the metal lines formed in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] As mentioned in the background, there are still problems with the metal lines formed in the prior art. The following will be described in detail with reference to the accompanying drawings.

[0031] It should be noted that the "surface" in this specification is used to describe the relative positional relationship in space, and is not limited to whether it is in direct contact.

[0032] Figure 1 to Figure 5 It is a schematic structural diagram of each step of a method for forming a semiconductor structure.

[0033] Please refer to figure 1 , to provide the layer 100 to be etched (such as image 3 shown), the layer to be etched 100 includes adjacent first regions I and second regions II; a sacrificial layer 110 is formed on the surface of the layer to be etched 100; the sacrificial layer 110 is etched, respectively in the A connected initial first conductive opening 111 and a first isolation opening 112 are formed in the sacrificial layer 110 , and the first isolati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for forming a semiconductor structure comprises the steps that a layer to be etched is provided, the layer to be etched comprises a first region and a second region which are arranged in the first direction, and the first region and the second region are adjacent in the first direction; a sacrificial layer is formed on the to-be-etched layer, a first conductive opening and a first partition opening which are communicated are formed in the sacrificial layer, the first conductive opening is located in the first region, and the first partition opening penetrates through the sacrificial layer on the second region in the second direction; forming a side wall film on the surface of the sacrificial layer, wherein the first partition opening is filled with the side wall film; a first patterned layer is formed on the side wall film, a second partition opening is formed in the first patterned layer, the second partition opening penetrates through the sacrificial layer on the first area and the sacrificial layer on the second area in the second direction, and the second partition opening on the second area exposes the side wall film in the first partition opening; and thinning the side wall film by taking the first graphical layer as a mask. Therefore, the reliability of the semiconductor structure is improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the improvement of circuit integration and the increase of scale, the size of the unit device in the circuit continues to shrink, and the requirements for the integrated circuit manufacturing process continue to increase. high. With the continuous reduction of the design size, the minimum resolution of the design pattern has exceeded the limit capability of the existing optical lithography platform. The industry has adopted a variety of technical solutions to solve this technical problem. According to the international semiconductor technology blueprint, Double patterning technology (DPT), extreme ultraviolet technology (EUV), electron beam direct writing (EBL) and other technical solutions have been placed high hopes by the industry. [0003] The existing two-time patterning pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/308
CPCH01L21/3086H01L21/3085
Inventor 刘睿张冠军黄沙
Owner SEMICON MFG INT (SHANGHAI) CORP