Semiconductor device structure with substrate biasing scheme

Abstract

The invention relates to a semiconductor device structure with a substrate bias scheme. A semiconductor device structure with a substrate bias, a method of forming a semiconductor device structure with a substrate bias, and a method of operating a semiconductor device structure with a substrate bias are disclosed. A substrate contact is coupled to a portion of the bulk semiconductor substrate in the device region. The substrate contact is configured to be biased with a negative bias voltage. The field effect transistor includes a semiconductor body in a device region of a bulk semiconductor substrate. The semiconductor body is electrically isolated from a portion of the bulk semiconductor substrate.

Description

technical field [0001] The present invention relates to semiconductor device fabrication and integrated circuits, and more particularly, to semiconductor device structures with substrate bias, methods of forming semiconductor device structures with substrate bias, and methods for operating semiconductor device structures with substrate bias method. Background technique [0002] Device structures such as field effect transistors tend to exhibit high capacitance and body-to-body leakage when formed using a bulk semiconductor substrate. One measure that can be taken to reduce susceptibility is to provide the bulk semiconductor substrate with triple well isolation that isolates the transistor body from the substrate. However, transistor switches with triple well isolation may exhibit poor linearity. Another measure to reduce sensitivity is to replace the bulk semiconductor substrate with a silicon-on-insulator (SOI) substrate, where a thin top silicon layer provides the active...

AI Technical Summary

Problems solved by technology

The buried oxide layer isolates the transistor body from the handle substrate, but silicon-on-insulator is expensive

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