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Vertically integrated electro-absorption modulated laser and method of manufacture

A technology of absorption modulation and integrated electricity, which is applied in the direction of lasers, semiconductor lasers, laser components, etc., can solve the problems of poor long-term reliability and high price

Pending Publication Date: 2022-06-17
ELECTROPHOTONIC IC INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High-performance modulation, such as PAM4, may not be possible with currently available low-cost transmitters, and discrete drive and control electronics
[0022] In some applications, currently available directly modulated or EML lasers cannot provide sufficient optical output power for long-distance optical interconnects, requiring the use of more sensitive avalanche photodiode detectors, which are expensive and have poor long-term reliability

Method used

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  • Vertically integrated electro-absorption modulated laser and method of manufacture
  • Vertically integrated electro-absorption modulated laser and method of manufacture
  • Vertically integrated electro-absorption modulated laser and method of manufacture

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Embodiment Construction

[0113] Figure 1 (Prior Art) shows a schematic block diagram of an example of a butt-coupled EML assembly. The EML assembly consists of a CW laser diode connected to the EAM, mounted on a common substrate, which is backside cooled using a thermoelectric cooler (TEC). Figure 2 (Prior Art) shows a typical normalized transfer function of the EML as shown in Figure 1, ie the normalized transfer of the EAM as a function of applied voltage. In this example, the EAM has 100% transmission at the specified wavelength at zero bias and 0% transmission at -2V reverse bias.

[0114] Figures 3 to 5 (Prior Art) show schematic longitudinal cross-sections (ie through the light propagation axis) of three examples of monolithically integrated EMLs. The EML shown schematically in Figure 3 includes a DFB laser and an EAM fabricated on the same substrate using two different epitaxial layer structures, a waveguide structure for the DFB laser and the EAM, optically coupled through an isolation region...

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Abstract

Monolithically integrated electro-absorption modulated lasers (EMLs) and methods of manufacture are disclosed. A vertical stacked waveguide vertical integration for a distributed feedback (DFB) laser, an electro-absorption modulator (EAM), and a passive output waveguide, the DFB laser, the EAM, and the output waveguide being optically coupled using a lateral tapered vertical optical coupler. Vertical integration using transverse tapered vertical optical couplers provides an alternative for traditional docking coupling of lasers and EAMs, which is possible to improve reliability of high power operation with extended lifetime. Optionally, the EML includes monolithic integrated electronic circuitry, such as drive and control electronics of the DFB laser and EAM. Advantageously, the integrated EAM drive and control circuit includes a high speed electro-optic control loop for very high speed linearization and temperature compensation, e.g., enabling advanced modulation schemes, such as PAM-4 and DP-QPSK, for analog optical data center interconnect applications. Some embodiments are compatible with fabrication using a single epitaxial growth.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to U.S. Provisional Patent Application No. 62 / 936,629, filed November 18, 2019, entitled "Vertically Integrated Electro-Absorption Modulated Lasers and Methods of Fabrication," The US Provisional Patent Application is incorporated herein by reference in its entirety. This application is related to US Patent Application No. 16 / , filed on December 10, 2019, entitled "Electro-Absorption Modulator with Integrated Control Loop for Linearization and Temperature Compensation" US Patent Application No. 708,887, filed January 31, 2019, entitled "Integrated Control Loop for Linearization and Temperature Compensation of an Electro-Absorption Modulator" Portion of US Patent Application Serial No. 16 / 263,169, which claims priority to US Provisional Patent Application No. 62 / 625,311, filed February 1, 2018, and has the same title; which is incorporated herein by reference in its entirety. technical fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/026G02B6/12H01L33/16H01S5/065H01S5/323H01S5/12
CPCH01S5/026H01S5/12H01S5/1032H01S5/1014H01S5/0265H01S5/0208H01S5/0239H01S5/0427H01S5/042H01S5/06832H01S5/0264G02B6/1228G02B2006/12147H01S5/0014H01S5/1231H01S5/22H01S5/32391
Inventor 戈德蒙·A·哈尔特森威廉·A·哈格利
Owner ELECTROPHOTONIC IC INC
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