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High-end level shift circuit, high-end power control circuit and anti-interference method

A level shift circuit, high-end technology, applied in the direction of eliminating voltage/current interference, controlling/regulating system, adjusting electrical variables, etc., can solve the problems of LDMOS tube manufacturing process influence, power integrated circuit blocking, power integrated circuit burning and other problems

Pending Publication Date: 2022-05-06
苏州炬仁半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When the existing high-end power control circuit is working, because the high-level shift circuit is mainly composed of LDMOS tubes and resistors connected in series, there is a parasitic capacitance at the drain due to the influence of the LDMOS tube's own manufacturing process.
When the floating ground of the circuit changes, noise interference will be generated. At this time, the noise will form a path to the ground through the parasitic capacitance. If the noise is too large, a large voltage drop will be formed on the load resistance.
At this time, the post-stage circuit will mistake the noise as a normal signal and transmit it downward, which will cause the power integrated circuit to lock up, and even cause the entire power integrated circuit to burn out

Method used

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  • High-end level shift circuit, high-end power control circuit and anti-interference method
  • High-end level shift circuit, high-end power control circuit and anti-interference method
  • High-end level shift circuit, high-end power control circuit and anti-interference method

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Effect test

Embodiment 1

[0041] The high-end level shift circuit and the high-end power control circuit disclosed in the present invention will be further specifically introduced below in combination with the embodiments shown in the accompanying drawings.

[0042] like figure 1 As shown, the high-end level shift circuit includes a cross-coupled first coupling module and a second coupling module. The first coupling module includes a first LDMOS transistor LDMOS1, a first PMOS transistor MP1, a first capacitor C1, a first resistor R1, a first voltage regulator diode VD1, and a second voltage regulator diode VD2, and the second coupling module includes The second LDMOS transistor LDMOS2 , the second PMOS transistor MP2 , the second capacitor C2 , the second resistor R2 , the third voltage regulator diode VD3 and the fourth voltage regulator diode VD4 .

[0043] The source of the first LDMOS transistor LDMOS1 is grounded, and the drain is connected to the anode of the second Zener diode VD2, the first c...

Embodiment 2

[0051] The high-end level shift circuit and the high-end power control circuit disclosed in the present invention will be further specifically introduced below in combination with the embodiments shown in the accompanying drawings.

[0052] like figure 1 As shown, the high-end power control circuit includes a pulse generation circuit, a filter circuit, an RS flip-flop, an output drive circuit, and the high-end level shift circuit. Wherein, the pulse generating circuit is used to form two low-voltage narrow-pulse working signals; the high-level shift current is used to convert the two low-voltage narrow-pulse working signals into two high-voltage narrow-pulse working signals; the filtering The circuit is used to filter the two high-voltage narrow-pulse working signals to remove the noise signal; the RS flip-flop is used to restore the high-voltage narrow-pulse working signal to a high-voltage wide-pulse working signal; the output drive circuit is used to boost The driving capa...

Embodiment 3

[0056] The anti-jamming method disclosed in the present invention will be further specifically introduced below in combination with the embodiments shown in the accompanying drawings.

[0057] When the high-end power control circuit is in normal operation, its waveform diagram is as follows figure 2 shown. When the circuit works normally, the source of the third PMOS transistor MP3 is at a high level V B , the third PMOS transistor MP3 is turned on, if the gate input signal Vin1 of the first LDMOS transistor LDMOS1 is at a high level, the first output terminal formed by the first coupling module, that is, the potential at point A will be pulled down from a high level to a low level flat. The first capacitor C1 is in the charging state. When the first LDMOS transistor LDMOS1 is turned on, the first capacitor C1 will be charged to 15V. At the same time, the second PMOS transistor MP2 is turned on. The second output terminal formed by the second coupling module, that is, the p...

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Abstract

The invention relates to the technical field of electronics and microelectronics, and discloses a high-end level shift circuit, a high-end power control circuit and an anti-interference method. The high-end level shift circuit adopts a cross coupling mode and comprises a first coupling module and a second coupling module which are in cross connection with each other; and a capacitor is used as a load. The high-end power control circuit comprises the high-end level shift circuit. Therefore, the high-end level shift circuit and the high-end power control circuit have stronger anti-interference characteristics. The anti-interference method is performed based on the high-end power control circuit, and can prevent the high-end level shift circuit from mistakenly considering the noise signal as a normal signal, so that the high-end level shift circuit transmits the noise signal to a subordinate circuit. Therefore, the interference of noise signals on the whole circuit is prevented.

Description

technical field [0001] The invention relates to the technical field of electronics and microelectronics, in particular to a high-end level shift circuit, a high-end power control circuit and an anti-interference method. Background technique [0002] Power integrated circuits are an important product of the combination of electronic technology and microelectronic technology. The power integrated circuit includes a main chip, an interface circuit, a power control circuit, a protection circuit, a detection circuit, and a high-voltage power device, etc., and can simultaneously realize information collection, amplification, processing, and loading. And because of its advantages of strong reliability and small size, it is widely used in aerospace, new energy and smart home and other fields. [0003] The power control circuit is the core component of the power integrated circuit, which consists of a high-end power control circuit and a low-end power control circuit that cooperate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/003G05F1/66
CPCH03K19/00361G05F1/66
Inventor 郭俊杰田瑶常昌远徐申叶佳玲孙祎轩
Owner 苏州炬仁半导体有限公司
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