Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure with trench junction barrier schottky diode

A junction barrier Schottky and semiconductor technology, applied in the direction of diodes, semiconductor devices, transistors, etc., can solve the problems of low resistance, long current path, and inability to have

Pending Publication Date: 2022-06-21
黄智方
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the prior art, the position of the junction barrier Schottky affects the current path, so the current path of the semiconductor structure in the known technology is too long to have a lower resistance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure with trench junction barrier schottky diode
  • Semiconductor structure with trench junction barrier schottky diode
  • Semiconductor structure with trench junction barrier schottky diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Please refer to figure 1 , figure 1 A schematic top view of a semiconductor structure 100 with a trench junction barrier Schottky diode according to an embodiment of the present invention is shown; wherein the distance C1 represents the trench width of the UMOS structures 30 , 40 and 50 ; the distance C2 represents the trench junction The trench width of the barrier Schottky diode 10 .

[0030] Please note that each cell of the semiconductor structure 100 is a structure in which a UMOS structure and a trench junction barrier Schottky diode are connected in parallel.

[0031] Please refer to figure 2 , figure 2 show the invention figure 1 A schematic diagram of an embodiment of the A-B cross-section of the semiconductor structure 100 includes a trench junction barrier Schottky diode 10, and the trench junction barrier Schottky diode 10 includes: a metal layer 10a, an N-type semiconductor substrate 10b, and an N-type drift region. (N-drift region) 10c, N-type curre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor structure with a trench junction barrier Schottky diode. The semiconductor structure comprises a trench gate power metal oxide semiconductor field effect response transistor structure; and a trench junction barrier Schottky diode. A side grid electrode is not arranged in an insulating layer on the side wall of the trench junction barrier Schottky diode. The semiconductor structure with the trench junction barrier Schottky diode has the shortest current path, and the current path is perpendicular to the horizontal plane or the Schottky barrier.

Description

technical field [0001] The present invention relates to a semiconductor structure, especially a semiconductor structure having a trench junction barrier Schottky diode. Background technique [0002] MOSFETs are often used in parallel with diodes in applications. The general practice is to implement individual packages on circuit boards or in modules in the form of individual chips, which increases packaging costs and increases the volume of circuits and modules. The present invention proposes a method of integrating the power metal oxide semiconductor field effect transistor and the diode in the same chip, which can effectively solve the aforementioned problems and reduce the cost. [0003] However, in the prior art, since the position of the Schottky junction barrier affects the current path, the current path of the semiconductor structure in the prior art is too long to have lower resistance. SUMMARY OF THE INVENTION [0004] The object of the present invention is to pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/78
CPCH01L29/872H01L29/7813H01L29/8725H01L29/7806H01L29/0623H01L29/0878H01L29/407H01L29/0696H01L27/095H01L29/4238H01L29/42364
Inventor 黄智方胡家玮林祐安詹咏翔
Owner 黄智方