Method for removing oxide layer on surface of silicon material

A surface oxidation and oxide layer technology, applied in chemical instruments and methods, cleaning methods using liquids, cleaning methods and utensils, etc., can solve problems such as high operator skill requirements, high acid consumption, and low qualification rate. , to achieve the effect of improving removal efficiency, low acid consumption and reducing contact time

Pending Publication Date: 2022-06-24
青岛晶易新材料科技股份有限公司
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, artificial mixed acid is generally used in the industry to etch the oxide layer on the surface of silicon mater

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing oxide layer on surface of silicon material
  • Method for removing oxide layer on surface of silicon material

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0035] Example 1:

[0036] like figure 1 As shown, a method for removing oxide layer on the surface of silicon material includes the following steps:

[0037] Step S100, preparing a cleaning solution, and stirring it evenly;

[0038] In step S200, the silicon material is completely soaked in the cleaning solution, taken out, and wiped;

[0039] Step S300, cleaning and drying.

[0040] In step S100, pure water, hydrofluoric acid, hydrochloric acid and citric acid monohydrate are prepared into a cleaning solution.

[0041] In step S200, the soaking time of the silicon material is 1-2 hours. Depending on the degree of oxidation, the soaking time of the silicon material can be appropriately increased or decreased, and then removed. The operator wears acid and alkali-resistant gloves and wipes the oxide layer on the surface of the silicon material to promote the oxide layer to fall off.

[0042] In step S300, the silicon material from which the oxide layer has been removed is p...

Example Embodiment

[0050] Embodiment 2:

[0051] The same parts of this embodiment and the first embodiment will not be repeated, and the differences are:

[0052]Add 300L pure water, 20L hydrofluoric acid, 15L hydrochloric acid and 12.5KG citric acid monohydrate to a 400L cleaning box, stir evenly, and prepare a cleaning solution. The cost of the cleaning solution is 0.1 yuan / KG, which is significantly lower than the prior art. cost of cleaning solutions.

[0053] Soak the silicon material completely in the cleaning solution for 1 hour, take it out, wipe it, and get the picture of the silicon material after acid etching such as figure 2 (a). Acid corrosion operators should dress as required: wear acid-resistant aprons, acid-proof shoes, long-sleeved rubberized gloves, gas masks, and protective face shields.

[0054] Keep the working environment well ventilated, confirm the operation of the fan, and discharge the irritating gas caused by pickling in time, which reduces the harm to the human ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for removing an oxide layer on the surface of a silicon material, which comprises the following steps: preparing a cleaning solution, uniformly stirring, completely soaking the silicon material in the cleaning solution, taking out, wiping, cleaning and drying. The silicon material is soaked in the cleaning solution, and the surface oxide layer is removed by optimizing the formula and proportion of the cleaning solution, so that the acid consumption is low; the requirement for skills of operators is low, operation is convenient, and acid marks cannot appear on the surface of the silicon material.

Description

technical field [0001] The invention relates to the technical field of silicon material cleaning, in particular to a method for removing an oxide layer on the surface of a silicon material. Background technique [0002] In today's world, fossil energy is gradually approaching exhaustion, and at the same time, a large number of mining and use have also seriously damaged the living environment of human beings. Therefore, seeking new energy to replace fossil energy has become a historical necessity. As a new type of available energy with huge content and infinite exploitation, solar energy has great prospects for development and utilization, and a series of solar photovoltaic power generation industries derived from it are also vigorous. [0003] Compared with conventional energy power generation, photovoltaic power generation has the following advantages: no fuel consumption, no geographical restrictions, energy can be obtained anywhere, can be used locally, easy to store, no...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B08B3/08B08B3/12B08B3/10F26B21/00
CPCB08B3/08B08B3/12B08B3/10B08B2203/007F26B21/00
Inventor 马鑫王建宁魏立博
Owner 青岛晶易新材料科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap