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Schottky diode

A technology of Schottky diode and anode area, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of shortening the working life and limiting the withstand voltage capability of devices, so as to improve the breakdown voltage, improve the withstand voltage of devices, and suppress Effect of Vertical Leakage Current

Pending Publication Date: 2022-06-24
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Research on Schottky diodes found that the vertical leakage current of the device limits the withstand voltage capability of the device, shortens the working life, and makes the actual parameters and theoretical expectations have a large gap

Method used

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  • Schottky diode
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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solutions of the present invention more clearly, and cannot be used to limit the protection scope of the present invention.

[0024] like figure 1 As shown, a Schottky diode includes an anode region 1, a field plate region 2, a drift region 3, a substrate region 4 and a cathode region 5; wherein, the anode region 1, the drift region 3, the substrate region 4 and the cathode region 5. Set up this time from top to bottom, the field plate area 2 is arranged in the middle of the anode area 1, and the field plate area 2 is divided into a gate structure, that is, the field plate area 2 is divided into a plurality of field plates, a field plate area and a drift area. The materials are all made of α-Ga 2 O 3 . Increasing the thickness of the drift region and adding the field plate structure within a certain ran...

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Abstract

The Schottky diode comprises an anode region, a drift region, a substrate region and a cathode region which are sequentially arranged from top to bottom, and further comprises a field plate region, the field plate region is arranged in the middle of the anode region, the field plate region is divided into gate structures, and the field plate region and the drift region are both made of alpha-Ga2O3. The field plate region of the gate structure is additionally arranged in the middle of the anode region, the field plate region and the drift region are both made of alpha-Ga2O3 materials, the field plate region of the gate structure can optimize the current crowding effect, the electric field distribution at the contact surface of an electrode and the drift region is improved, the breakdown voltage of the device is improved, the drift region based on the alpha-Ga2O3 can improve the breakdown voltage of the device, and the device can be applied to the field device. The vertical leakage current can be suppressed by increasing the thickness, and the withstand voltage of the device can be improved, so that the maximum breakdown field strength of the device exceeds 10MV / cm, and the problems of high leakage current and low withstand voltage of the existing power diode are solved.

Description

technical field [0001] The invention relates to a Schottky diode, which belongs to the field of semiconductor devices. Background technique [0002] The research on Schottky diodes found that the vertical leakage current of the device limits the withstand voltage capability of the device, shortens the working life, and makes a large gap between the actual parameters and theoretical expectations. Therefore, how to improve the withstand voltage range and suppress the vertical leakage current is the difficulty of current research. SUMMARY OF THE INVENTION [0003] The present invention provides a Schottky diode that solves the problems disclosed in the background art. [0004] In order to solve the above-mentioned technical problems, the technical scheme adopted in the present invention is: [0005] A Schottky diode includes an anode region, a drift region, a substrate region and a cathode region which are arranged in this order from top to bottom, and also includes a field...

Claims

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Application Information

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IPC IPC(8): H01L29/40H01L29/04H01L29/06H01L29/24H01L29/43H01L29/872
CPCH01L29/872H01L29/404H01L29/43H01L29/0684H01L29/045H01L29/24
Inventor 葛雅倩盛雨李思彦陈琳
Owner NANJING UNIV OF POSTS & TELECOMM