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Semiconductor module and power conversion device

A semiconductor and conductivity technology, applied in the field of semiconductor modules and power conversion devices, can solve the problems of temperature Tlvic temperature deviation and insufficient temperature protection of the temperature protection circuit, and achieve the effect of suppressing damage

Pending Publication Date: 2022-06-28
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, during a transient operation in which the junction temperature Tj of the IGBT chip rises sharply, such as a motor lock operation or a short-circuit operation, a temperature deviation occurs between the temperature Tj and the temperature Tlvic of the thermal protection circuit.
Therefore, there is a problem of insufficient temperature protection

Method used

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  • Semiconductor module and power conversion device
  • Semiconductor module and power conversion device
  • Semiconductor module and power conversion device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0023] figure 1 It is a plan view showing the semiconductor module according to the first embodiment. The semiconductor module is an inverter module. The LVIC 1 for low-side driving drives the U-phase switching element 2a, the V-phase switching element 2b, and the W-phase switching element 2c. The switching elements 2 a , 2 b , and 2 c are, for example, IGBTs, and have gate pads 3 . The LVIC 1 includes an input unit 4 , output units 5 a , 5 b , and 5 c , a temperature protection circuit 6 , a power supply circuit 7 , an overcurrent protection circuit 8 , and a power supply drop protection circuit 9 . A U-phase output unit 5a, a V-phase output unit 5b, and a W-phase output unit 5c are provided for the U-phase, V-phase, and W-phase switching elements 2a, 2b, and 2c, respectively.

[0024] The input unit 4 transmits a control signal from the outside to the output units 5a, 5b, and 5c. The output units 5 a , 5 b , and 5 c have output pads 10 . The output pads 10 of the output...

Embodiment approach 2

[0049] Figure 9 It is a plan view showing the semiconductor module according to the second embodiment. The temperature protection circuit 6 is arranged in the vicinity of the output pads 10 of the output units 5 a , 5 b , and 5 c as compared with other circuits such as the power supply drop protection circuit 9 included in the LVIC 1 . Thereby, since the thermal conductivity to the temperature protection circuit 6 is further improved, the rapid rise of the temperature Tj of the switching elements 2a, 2b, and 2c can be detected more accurately.

Embodiment approach 3

[0051] Figure 10 It is a plan view showing the switching element and the output unit according to the third embodiment. Dummy pads 14 are provided beside the output pads 10 of the output sections 5a, 5b, and 5c. Dummy pads 15 are provided beside the gate pads 3 of the switching elements 2a, 2b, and 2c.

[0052] The output pads 10 of the output sections 5a, 5b, and 5c are connected to the gate pads 3 of the switching elements 2a, 2b, and 2c via the conductive wires 16. The dummy pads 14 of the output parts 5 a , 5 b , and 5 c are connected to the dummy pads 15 of the switching elements 2 a , 2 b , and 2 c via the heat conducting wires 17 .

[0053] Figure 11 It is an enlarged plan view of the output pad and the temperature protection circuit according to the third embodiment. The thermal conductive pattern 13 is connected to the dummy pad 14 . The heat conduction pattern 13 extends from the dummy pad 14 toward the temperature protection circuit 6 , and conducts the heat ...

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Abstract

Provided are a semiconductor module and a power conversion device capable of achieving sufficient temperature protection. The switching elements (2a, 2b, 2c) have gate pads (3). The output section (5a, 5b, 5c) has an output pad (10) connected to the gate pad (3) of the switching element (2a, 2b, 2c) through a line (11), and outputs a drive signal from the output pad (10) to the switching element (2a, 2b, 2c). The temperature protection circuit (6) detects the temperature and performs a protection operation. The heat transfer pattern (13) is connected to the output pad (10), extends from the output pad (10) toward the temperature protection circuit (6), and transfers heat generated by the switching elements (2a, 2b, 2c) to the temperature protection circuit (6).

Description

technical field [0001] The present invention relates to a semiconductor module and a power conversion device that detect temperature and perform a protective operation. Background technique [0002] In recent years, LVICs (low-voltage integrated circuits) mounted on inverter modules have a temperature detection function for overheat protection. The heat generated inside the module is mainly generated by the IGBT chip. The heat generated by the IGBT chip reaches the temperature protection circuit of the LVIC via the metal frame and the molding resin for encapsulation (for example, refer to Patent Document 1). The temperature protection circuit is an indispensable protection function against the phenomenon that the module temperature rises relatively slowly, such as when the motor is overloaded or the cooling fan fails. [0003] Patent Document 1: Japanese Patent Laid-Open No. 2011-199150 [0004] However, during a transient operation in which the junction temperature Tj of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H5/04H02H7/12H02H7/122H02M1/00H02M7/00
CPCH02H7/1203H02H7/122H02H7/1225H02H5/04H02M1/00H02M7/003H02P27/08H02P29/68H01L23/34H01L23/3677H01L2224/48091H01L25/16H01L2224/45147H01L2224/45139H01L2224/45144H01L24/45H01L2224/45015H01L2224/06519H01L24/06H01L24/49H01L24/48H01L2224/05554H01L2224/45186H01L2924/00014H01L2924/2076H01L23/49568H01L23/4952H01L23/49575H01L23/49562H01L2924/13064H01L2224/48247H01L2924/13091
Inventor 杉町诚也冲和史
Owner MITSUBISHI ELECTRIC CORP