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Laser annealing method and equipment for electrode

A laser annealing and electrode technology, which is applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of low quality of electrical connection between semiconductor devices and external devices, poor ohmic contact performance, etc., and achieves better ohmic contact performance. Poor, improve stability, improve uniformity effect

Pending Publication Date: 2022-07-01
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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Problems solved by technology

In the prior art, electrodes are formed by depositing metal on the back of the substrate. However, the ohmic contact performance between metal el

Method used

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  • Laser annealing method and equipment for electrode
  • Laser annealing method and equipment for electrode
  • Laser annealing method and equipment for electrode

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[0055]下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释本发明，而非对本发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本发明相关的部分而非全部结构。

[0056]有鉴于背景技术中提到的问题，本发明实施例提供了一种电极的激光退火方法，该方法包括：

[0057]提供衬底；其中，衬底包括第一电极设置区；

[0058]在衬底一侧形成第一掺杂层；其中，第一掺杂层中掺杂有第一掺杂源；

[0059]在第一掺杂层背离衬底的一侧形成第一金属层；

[0060]采用第一激光器对位于第一电极设置区的第一掺杂层和第一金属层进行热处理，以使第一掺杂源和第一金属层中的金属分子扩散至第一电极设置区；

[0061]采用第二激光器对位于第一电极设置区的第一金属层进行热处理，以使第一金属层与衬底形成欧姆接触。

[0062]以上是本申请的核心思想，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下，所获得的所有其他实施例，都属于本发明保护的范围。

[0063]图1是本发明实施例提供的一种电极的激光退火方法的流程图。参见图1，该方法包括：

[0064]S110、提供衬底。

[0065]具体的，衬底的材料本领域技术人员可根据实际情况设置，此处不作限定。可选的，衬底的材料包括碳化硅。

[0066]示例性的，图2是本发明实施例提供的一种衬底的结构示意图。参见图2，衬底10包括第一电极设置区11，第一电极设置区11包括多个第一电极子设置区111，每个第一电极子设置区111对应一个电极，图2中仅示例性示出了第一电极设置区11包括六个第一电极子设置区111，但并非对本发明实施例的限定，本领域技术人员可根据实际情况设置第一电极子设置区111的数量。

[0067]S120、在衬底一侧形成第一掺杂层。

[0068]具体的，第一掺杂层的厚度本领域技术人员可根据实际情况设置，此处不作限定。示例性的，第一掺杂层的厚度范围为10nm-500nm。具体的，第一掺杂层包括主体材料和第一掺杂源，主体材料和第一掺杂源的具体材料本领域技术人员可根据实际情况设置，此处不作限定。可选的，第一掺杂层的主体材料包括碳化硅或氧化硅，优选的，第一掺...

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Abstract

The embodiment of the invention discloses a laser annealing method and equipment for an electrode. The method comprises the following steps: providing a substrate; wherein the substrate comprises a first electrode arrangement region; forming a first doping layer on one side of the substrate; wherein a first doping source is doped in the first doping layer; forming a first metal layer on one side, deviating from the substrate, of the first doping layer; performing heat treatment on the first doping layer and the first metal layer in the first electrode setting area by adopting a first laser, so that metal molecules in the first doping source and the first metal layer are diffused to the first electrode setting area; and carrying out heat treatment on the first metal layer in the first electrode setting area by adopting a second laser so as to enable the first metal layer and the substrate to form ohmic contact. According to the technical scheme provided by the embodiment of the invention, stable and uniform ohmic contact can be formed between the first metal layer and the substrate, so that the electric connection quality of the semiconductor device and the external device is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a method and equipment for laser annealing of electrodes. Background technique [0002] With the development of semiconductor technology, the performance of semiconductor devices has been greatly improved, and the application fields of semiconductor devices have become more and more extensive. [0003] An important structure in a semiconductor device is an electrode, which is used for signal transmission with external devices, and its performance directly affects the effective signal transmission between the semiconductor device and external devices. In the prior art, electrodes are formed by depositing metal on the back of the substrate. However, the ohmic contact performance between the metal electrode and the non-metal substrate is poor, resulting in poor electrical connection quality between the semiconductor device and the external device. ...

Claims

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Application Information

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IPC IPC(8): H01L21/04H01L21/02
CPCH01L21/0485H01L21/02694
Inventor 张为国张俊唐世弋
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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