Array substrate and display panel
An array substrate and substrate technology, applied in semiconductor devices, electrical components, transistors, etc., can solve the problems of low mobility and poor stability of metal oxide thin film transistors, and achieve the effect of improving mobility and stability
Pending Publication Date: 2022-07-01
GUANGZHOU CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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[0003] Embodiments of the present invention provide an array substrate and a display panel to solve the technical problems of low mobility and poor stability of existing metal oxide thin film transistors
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[0037] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present invention. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention. In the present invention, unless otherwise stated, the directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the direction of the drawing in the accompanying drawings. ...
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Abstract
The invention discloses an array substrate and a display panel, the array substrate comprises a substrate, a grid electrode, a grid electrode insulating layer, an oxide semiconductor layer and a source drain electrode metal layer, and the material of the oxide semiconductor layer comprises an oxide of a first metal element; according to the invention, the material of at least the part, in contact with the oxide semiconductor layer, of the gate insulating layer is also the oxide of the first metal element, so that the transition interface between the gate insulating layer and the oxide semiconductor layer has relatively low defect state density; therefore, the situation that in the prior art, due to the fact that the gate insulating layer and the oxide semiconductor layer have different material components, the gate insulating layer and the oxide semiconductor layer make direct contact with each other, and more defect states are generated at a transition interface is avoided, and the mobility and stability of the thin film transistor are improved.
Description
technical field [0001] The present invention relates to the field of display technology, and in particular, to an array substrate and a display panel. Background technique [0002] With the development of display panels in the direction of large size / high resolution / high frequency and self-luminous display mode, higher and higher requirements are put forward for the mobility and stability of thin film transistors that control switches and drive displays. The mobility of thin film transistors is as high as 10-100 times that of amorphous silicon thin film transistors, but compared with low temperature polysilicon thin film transistors, metal oxide thin film transistors still have low mobility and poor stability. SUMMARY OF THE INVENTION [0003] Embodiments of the present invention provide an array substrate and a display panel to solve the technical problems of low mobility and poor stability of the existing metal oxide thin film transistors. [0004] For solving the above...
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IPC IPC(8): H01L27/12H01L29/51H01L29/786
CPCH01L27/1222H01L27/1237H01L29/7869H01L29/517H01L27/1225H01L27/1248
Inventor 赵军赵斌肖军城李珊吴伟
Owner GUANGZHOU CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD