Reverse conducting insulated gate bipolar transistor with anode integrated with Schottky super barrier auxiliary gate
A technology of bipolar transistors and auxiliary gates, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as inability to achieve reverse conduction performance, complex external drive circuits, and weak forward conduction capabilities of devices, so as to achieve reverse Conduction capability, elimination of negative resistance effect, and improvement of working stability
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Embodiment 1
[0065] A reverse-conducting insulated gate bipolar transistor with an anode integrated Schottky super-barrier auxiliary gate, comprising an anode contact region 1, a heavily doped second conductive type anode region 2, a first conductive type anode buffer 3, a A conductivity type drift region 4, a second conductivity type cathode well region 5, a heavily doped first conductivity type cathode region 6, a heavily doped second conductivity type cathode region 7, a cathode contact region 8, a gate dielectric layer 9, a gate A pole contact region 10 , an anode auxiliary gate dielectric layer 13 , an anode auxiliary gate contact region 14 and an anode Schottky contact region 15 .
[0066] The first conductive type drift region 4 covers the first conductive type anode buffer region 3 .
[0067] The second conductivity type cathode well region 5 covers the first conductivity type drift region 4 .
[0068] The heavily doped first conductivity type cathode region 6 and the heavily dope...
Embodiment 2
[0086] A reverse-conducting insulated gate bipolar transistor with an anode integrated Schottky super-barrier auxiliary gate, comprising an anode contact region 1, a heavily doped second conductive type anode region 2, a first conductive type anode buffer 3, a A conductivity type drift region 4, a second conductivity type cathode well region 5, a heavily doped first conductivity type cathode region 6, a heavily doped second conductivity type cathode region 7, a cathode contact region 8, a gate dielectric layer 9, a gate A pole contact region 10 , an anode auxiliary gate dielectric layer 13 and an anode Schottky contact region 15 .
[0087] The first conductive type drift region 4 covers the first conductive type anode buffer region 3 .
[0088] The second conductivity type cathode well region 5 covers the first conductivity type drift region 4 .
[0089] The heavily doped first conductivity type cathode region 6 and the heavily doped second conductivity type cathode region 7 ...
Embodiment 3
[0107] The first conductivity type is selected to be N-type, and the second conductivity type is selected to be P-type.
[0108] like Figure 5 As shown, a reverse-conducting insulated gate bipolar transistor with an anode integrated Schottky super-barrier auxiliary gate includes an anode contact region 1, an anode P+ region 2, an N-type buffer region 3, an N-type drift region 4, and a P+ region. Type cathode well region 5, cathode N+ region 6, cathode P+ region 7, cathode contact region 8, gate dielectric layer 9, gate contact region 10, anode auxiliary gate dielectric layer 13, anode auxiliary gate contact region 14 and anode Schott base contact area 15;
[0109] The N-type drift region 4 covers the N-type buffer zone 3;
[0110] The P-type cathode well region 5 covers part of the surface above the N-type drift region 4; the cathode N+ region 6 and the cathode P+ region 7 cover part of the surface above the P-type cathode well region 5; the cathode contacts The region 8 c...
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